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IRG4BC20UD-STRL

International Rectifier

IRG4BC20UD-STRL by International Rectifier

IRG4BC20UD-STRL by International Rectifier is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 320ns, making it suitable for power control applications requiring fast switching speeds. This IGBT comes in a small outline package with gull wing terminals for surface mount assembly.

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$1.332

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Overview

Unlock the power of your projects with the IRG4BC20UD-STRL from International Rectifier. As a leader in the industry, International Rectifier ensures top-notch quality and reliability in their Insulated Gate Bipolar Transistors (IGBT). Whether you're working on power control applications or need a single-channel transistor with a built-in diode, this product offers exceptional value and performance. With a maximum collector-emitter voltage of 600V and a maximum gate-emitter voltage of 20V, the IRG4BC20UD-STRL is designed to meet your high-power needs while delivering efficiency and dependability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and durability for the product

Polarity or Channel Type: N-CHANNEL

Enhances efficiency and performance of power control applications

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and provides additional functionality

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance

Surface Mount: YES

Facilitates easy and convenient installation on PCBs

Maximum Fall Time (tf): 170 ns

Fast switching speed allows for efficient power control

Nominal Turn Off Time (toff): 320 ns

Optimal turn-off time for effective power control operations

Maximum Power Dissipation (Abs): 60 W

Capable of handling high power levels with ease

Package Style (Meter): SMALL OUTLINE

Compact and space-saving design for efficient PCB layout

Maximum Operating Temperature: 150 °C

Suitable for high temperature operating environments

Maximum Collector-Emitter Voltage: 600 V

Can handle high voltage levels in power control applications

Transistor Element Material: SILICON

Provides reliable and consistent performance

Maximum Gate-Emitter Voltage: 20 V

Safe operating range for gate control signals

Maximum Collector Current (IC): 13 A

Capable of handling high current levels with ease

Maximum Gate-Emitter Threshold Voltage: 6 V

Optimal threshold voltage for efficient gate control

Terminal Finish: Tin/Lead (Sn/Pb)

Provides good solderability and reliability

Terminal Position: SINGLE

Simplifies PCB layout and connection

Case Connection: COLLECTOR

Helps in proper connection and heat dissipation

Maximum Time At Peak Reflow Temperature (s): 30

Sufficient time for proper reflow soldering during assembly

Peak Reflow Temperature °C: 225

Suitable reflow temperature for reliable soldering

Nominal Turn On Time (ton): 55 ns

Fast turn-on time for efficient power control operations

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRG4BC20UD-STRL attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

170 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

225

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

320 ns

Nominal Turn On Time (ton):

55 ns

Trade Compliance

IRG4BC20UD-STRL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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