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5SNA3600E170300

Abb

5SNA3600E170300 by Abb

Abb's 5SNA3600E170300 IGBT features N-CHANNEL polarity, 3600A IC, and 1700V VCE. Ideal for power control applications with a complex configuration and fast ton of 835ns.

Median Price

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Lifecycle Status

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3

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1k+

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VNN

France . 2,064 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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Vyrian

USA . 381 parts In-Stock

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AZTECH Wire

Italy . 381 parts In-Stock

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Argo Parts USA

USA . 1,423 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 525 parts In-Stock

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Overview

Experience unparalleled power control with the 5SNA3600E170300 by Abb. As a leader in insulated gate bipolar transistors, Abb guarantees top-notch quality and reliability for all your power control needs. Whether you're looking to optimize energy efficiency or enhance system performance, this product offers unmatched value and benefits. With its N-CHANNEL polarity and complex configuration, the 5SNA3600E170300 is perfect for a wide range of applications. Trust Abb to deliver cutting-edge technology that exceeds expectations every time.

Feature Benefit Bullets

Polarity or Channel Type:

N-CHANNEL - Allows for high power control capabilities, making it suitable for a variety of applications.

Configuration:

COMPLEX - Offers advanced performance and functionality for complex power control needs.

Transistor Application:

POWER CONTROL - Ideal for applications requiring precise and efficient power control capabilities.

Package Shape:

RECTANGULAR - Provides a compact and efficient design for easy integration into systems.

No. of Elements:

3 - Enables higher power handling capacity and better performance in demanding applications.

Nominal Turn Off Time (toff):

1600 ns - Offers quick switching capabilities for efficient power control.

No. of Terminals:

9 - Provides multiple connection points for versatile integration and control options.

Package Style (Meter):

FLANGE MOUNT - Allows for secure and stable mounting in various systems.

Maximum Collector-Emitter Voltage:

1700 V - Offers high voltage tolerance for reliable operation in demanding conditions.

Transistor Element Material:

SILICON - Ensures high reliability and performance in power control applications.

Maximum Collector Current (IC):

3600 A - Provides high current handling capacity for heavy-duty power control requirements.

Terminal Position:

UPPER - Facilitates easy connections and accessibility for efficient system integration.

Case Connection:

ISOLATED - Prevents electrical interference and improves overall system safety.

Nominal Turn On Time (ton):

835 ns - Delivers fast activation for precise and efficient power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) 5SNA3600E170300 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Abb

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Configuration:

JESD-30 Code:

R-XUFM-X9

No. of Elements:

3

No. of Terminals:

9

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1600 ns

Nominal Turn On Time (ton):

835 ns

Trade Compliance

5SNA3600E170300 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Abb

ABB is a technology leader in electrification and automation, enabling a more sustainable and resource-efficient future. The company’s solutions connect engineering know-how and software to optimize how things are manufactured, moved, powered and operated. Building on more than 130 years of excellence, ABB’s 105,000 employees are committed to driving innovations that accelerate industrial transformation.

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