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FGH50N6S2D

Onsemi

FGH50N6S2D by Onsemi

FGH50N6S2D by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 75A max collector current. It has a turn-off time of 180ns and turn-on time of 28ns, suitable for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at a max temperature of 150°C.

Median Price

$11.778

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,425 parts In-Stock

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$12.521

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2,425

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$12.521

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Rochester

USA . 2,345 parts In-Stock

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-

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$9.180

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$8.210

10k+ parts

$7.730

2,345

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$9.180

$8.210

$7.730

DigiKey

USA . 2,345 parts In-Stock

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$12.080

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2,345

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$12.080

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Verical

USA . 2,343 parts In-Stock

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$11.475

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$10.262

10k+ parts

$9.662

2,343

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$11.475

$10.262

$9.662

Flip Electronics (Authorized)

USA . 1,800 parts In-Stock

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1,800

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Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$9.715

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500

$9.715

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Digiode

USA . 2,114 parts In-Stock

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$9.718

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2,114

$9.718

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Vyrian

USA . 1,817 parts In-Stock

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1,817

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Flip Electronics

USA . 1,600 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 8 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 614 parts In-Stock

1+ parts

$9.207

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614

$9.207

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Corohmni

South Africa . 380 parts In-Stock

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$9.330

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380

$9.330

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Andel Nordic

Denmark . 3,364 parts In-Stock

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$9.551

100+ parts

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$9.169

10k+ parts

$9.169

3,364

$9.551

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$9.169

$9.169

Continental Prestige Electronics

USA . 1,030 parts In-Stock

1+ parts

$9.715

100+ parts

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$9.521

1,030

$9.715

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$9.521

Ampacity Inc.

Singapore . 1,900 parts In-Stock

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$18.930

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1,900

$18.930

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A-Z Elektronik GmbH

Germany . 7,542 parts In-Stock

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Kulean Microsystems

USA . 5,212 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Argo Parts USA

USA . 3,550 parts In-Stock

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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2,700

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TANS Electronics

Latvia . 2,684 parts In-Stock

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2,684

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Supply Digital

USA . 2,618 parts In-Stock

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Perfect Parts

USA . 2,520 parts In-Stock

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SupplyDigital Components

Austria . 1,579 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,128 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Kepictronics

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Problanco Electronics

Mexico . 405 parts In-Stock

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UHIMA Technologies

Türkiye . 67 parts In-Stock

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Assy Fe

Spain . 8 parts In-Stock

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Overview

Enhance your power control applications with the FGH50N6S2D by Onsemi. This high-quality Insulated Gate Bipolar Transistor (IGBT) offers reliable performance and durability, thanks to Onsemi's reputation for excellence in semiconductor manufacturing. With a maximum operating temperature of 150°C and a maximum collector-emitter voltage of 600V, this N-channel transistor provides efficient power management solutions. Say goodbye to frequent replacements and hello to long-lasting, dependable power control with the FGH50N6S2D.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the internal components of the IGBT, making it robust and durable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and faster switching speeds compared to P-channel types, making them suitable for high-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode helps to provide protection against voltage spikes and reverse currents, enhancing the reliability and efficiency of the IGBT.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring efficient and reliable performance in controlling high power levels.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in various electronic systems and devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and reliable connection to the circuit board, reducing the risk of disconnection or damage during operation.

Nominal Turn Off Time (toff): 180 ns

Fast turn-off time helps in reducing switching losses and improving efficiency of the IGBT in high-frequency applications.

No. of Terminals: 3

Having 3 terminals allows for easy connectivity and integration into circuit designs, enhancing flexibility and usability.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure and stable mounting options, ensuring mechanical stability and heat dissipation for the IGBT.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the IGBT to operate reliably in demanding environments without overheating or performance degradation.

Maximum Collector-Emitter Voltage: 600 V

High collector-emitter voltage rating allows the IGBT to handle high voltage levels, making it suitable for power control applications.

Transistor Element Material: SILICON

Silicon material ensures consistent and reliable performance of the IGBT over a wide range of operating conditions, enhancing its overall quality and longevity.

Maximum Collector Current (IC): 75 A

High collector current rating enables the IGBT to handle large currents with ease, making it suitable for high-power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable electrical connections and longevity of the IGBT.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and layout design, making it easier to integrate the IGBT into electronic circuits.

Nominal Turn On Time (ton): 28 ns

Fast turn-on time results in quick response and switching speed of the IGBT, essential for efficient power control and performance in high-speed applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGH50N6S2D attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

180 ns

Nominal Turn On Time (ton):

28 ns

Trade Compliance

FGH50N6S2D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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