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FGH50N3

Onsemi

FGH50N3 by Onsemi

FGH50N3 by Onsemi is an N-CHANNEL IGBT with 300V max collector-emitter voltage, 75A max collector current, and 463W max power dissipation. Ideal for power control applications due to its single configuration and fast turn-off time of 162ns. Package style is flange mount with through-hole terminals.

Median Price

$4.748

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,709 parts In-Stock

1+ parts

-

100+ parts

$4.220

1k+ parts

$3.770

10k+ parts

$3.550

10,709

-

$4.220

$3.770

$3.550

Verical

USA . 6,496 parts In-Stock

1+ parts

-

100+ parts

$5.275

1k+ parts

$4.713

10k+ parts

$4.438

6,496

-

$5.275

$4.713

$4.438

Avnet

USA . 330 parts In-Stock

1+ parts

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330

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Digiode

USA . 2,571 parts In-Stock

1+ parts

$4.684

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2,571

$4.684

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Vyrian

USA . 715 parts In-Stock

1+ parts

$4.930

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715

$4.930

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ACDS - Activité Composants Distribution Service

France . 61 parts In-Stock

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61

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Diverse Electronics

Canada . 43 parts In-Stock

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43

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Distributors (Availability)

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.445

100+ parts

$0.405

1k+ parts

$0.365

10k+ parts

-

10

$0.445

$0.405

$0.365

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Corphita

USA . 1,197 parts In-Stock

1+ parts

$4.437

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1,197

$4.437

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Component Stockers USA

USA . 65 parts In-Stock

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$4.770

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65

$4.770

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Corohmni

South Africa . 51 parts In-Stock

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$4.930

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51

$4.930

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Andel Nordic

Denmark . 4,020 parts In-Stock

1+ parts

$11.199

100+ parts

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$10.751

10k+ parts

$10.751

4,020

$11.199

-

$10.751

$10.751

Native Components

USA . 741 parts In-Stock

1+ parts

$57.040

100+ parts

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$54.758

741

$57.040

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$54.758

Northwest PG Solutions

USA . 951 parts In-Stock

1+ parts

$62.744

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951

$62.744

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Kulean Microsystems

USA . 8,285 parts In-Stock

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Problanco Electronics

Mexico . 6,453 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,242 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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TANS Electronics

Latvia . 3,878 parts In-Stock

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Supply Digital

USA . 2,037 parts In-Stock

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2,037

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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SupplyDigital Components

Austria . 1,582 parts In-Stock

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Perfect Parts

USA . 628 parts In-Stock

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Kepictronics

USA . 450 parts In-Stock

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450

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UHIMA Technologies

Türkiye . 343 parts In-Stock

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343

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Microchip USA

USA . 201 parts In-Stock

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201

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Overview

The FGH50N3 by Onsemi is a game-changer in the world of Insulated Gate Bipolar Transistors (IGBT). With a single configuration and N-channel polarity, this power control transistor offers unmatched quality and reliability. Ideal for applications requiring high power dissipation, such as industrial machinery and automotive systems, this transistor ensures optimal performance even in extreme conditions. Trust in Onsemi's expertise and choose the FGH50N3 for superior power control solutions that deliver value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliability and durability.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs have lower conduction losses and higher switching speeds compared to P-CHANNEL, making them more efficient for power control applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and offers ease of installation.

Maximum Power Dissipation (Abs): 463 W

High power dissipation capability allows the IGBT to handle large amounts of power without overheating.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures without compromising performance or reliability.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGH50N3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

162 ns

Nominal Turn On Time (ton):

32 ns

Trade Compliance

FGH50N3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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