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FGH50T65UPD

Onsemi

FGH50T65UPD by Onsemi

FGH50T65UPD by Onsemi is an N-CHANNEL IGBT with 650V VCE, 100A IC, and 340W Pd. Ideal for power control applications, it features a single configuration with built-in diode and fast switching times of 77ns (tr) and 29ns (tf). The device operates at up to 175 °C and has a gate-emitter threshold voltage of 7.5V.

Median Price

$5.404

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 81 parts In-Stock

1+ parts

$7.570

100+ parts

-

1k+ parts

$3.680

10k+ parts

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81

$7.570

-

$3.680

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DigiKey

USA . 223 parts In-Stock

1+ parts

$7.620

100+ parts

$4.409

1k+ parts

$3.703

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-

223

$7.620

$4.409

$3.703

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Verical

USA . 1,800 parts In-Stock

1+ parts

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$3.237

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1,800

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$3.237

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Rochester

USA . 556 parts In-Stock

1+ parts

-

100+ parts

$3.220

1k+ parts

$2.880

10k+ parts

$2.710

556

-

$3.220

$2.880

$2.710

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,383 parts In-Stock

1+ parts

$3.392

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1,383

$3.392

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Vyrian

USA . 3,044 parts In-Stock

1+ parts

$3.570

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3,044

$3.570

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ComSIT Distribution GmbH

Germany . 70 parts In-Stock

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70

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Distributors (Availability)

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Ampacity Inc.

Singapore . 97 parts In-Stock

1+ parts

$3.030

100+ parts

-

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97

$3.030

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Corphita

USA . 1,529 parts In-Stock

1+ parts

$3.213

100+ parts

-

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1,529

$3.213

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Corohmni

South Africa . 184 parts In-Stock

1+ parts

$3.570

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184

$3.570

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Native Components

USA . 170 parts In-Stock

1+ parts

$12.250

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170

$12.250

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Northwest PG Solutions

USA . 1,774 parts In-Stock

1+ parts

$13.475

100+ parts

$12.128

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1,774

$13.475

$12.128

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QUARKTWIN TECHNOLOGY LTD

USA . 27,864 parts In-Stock

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27,864

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TANS Electronics

Latvia . 7,479 parts In-Stock

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7,479

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SupplyDigital Components

Austria . 7,341 parts In-Stock

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Microchip USA

USA . 6,100 parts In-Stock

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6,100

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Metaverse IC Inc.

Canada . 4,132 parts In-Stock

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4,132

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Problanco Electronics

Mexico . 2,786 parts In-Stock

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2,786

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Kulean Microsystems

USA . 2,564 parts In-Stock

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2,564

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Supply Digital

USA . 1,068 parts In-Stock

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1,068

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Perfect Parts

USA . 765 parts In-Stock

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765

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Authorized Procurement Solutions

USA . 420 parts In-Stock

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420

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GreenTree Electronics

Israel . 420 parts In-Stock

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420

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UHIMA Technologies

Türkiye . 399 parts In-Stock

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399

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Overview

Experience the power and reliability of the FGH50T65UPD from Onsemi, a top-tier manufacturer known for cutting-edge technology and superior quality. This Insulated Gate Bipolar Transistor (IGBT) is perfect for power control applications, offering high performance and efficiency. With a maximum collector-emitter voltage of 650V and a maximum collector current of 100A, this transistor is designed to handle heavy-duty tasks with ease. Trust Onsemi to deliver value and innovation in every product, making the FGH50T65UPD a smart choice for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and higher efficiency, making this product suitable for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for easier circuit design and protection against reverse voltage.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance in controlling electrical power.

Maximum Rise Time (tr): 77 ns

Fast rise time allows for quick switching and response times in power control applications.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and integrate into circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering in circuit boards.

Maximum Fall Time (tf): 29 ns

Fast fall time ensures efficient switching and lower switching losses.

Nominal Turn Off Time (toff): 185 ns

Appropriate turn off time for optimal performance in power control applications.

No. of Terminals: 3

Sufficient number of terminals for connections in power control circuits.

Maximum Power Dissipation (Abs): 340 W

High power dissipation capability allows for handling of high power loads effectively.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides easy and secure mounting options.

Maximum Operating Temperature: 175 °C

High operating temperature range ensures stability and reliability in diverse environments.

Maximum Collector-Emitter Voltage: 650 V

High voltage rating enables handling of high voltage applications.

Transistor Element Material: SILICON

Silicon material offers good thermal stability and electrical properties for efficient power control.

Maximum Gate-Emitter Voltage: 25 V

Sufficient gate-emitter voltage rating for effective control in power applications.

Maximum Collector Current (IC): 100 A

High collector current rating allows for handling of high current loads effectively.

Maximum Gate-Emitter Threshold Voltage: 7.5 V

Threshold voltage ensures proper turn-on of the IGBT for efficient power control.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good soldering properties and reliability in connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and layout.

Case Connection: COLLECTOR

Case connected to the collector for effective heat dissipation and thermal management.

Nominal Turn On Time (ton): 101 ns

Quick turn on time for efficient power control and switching operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGH50T65UPD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Fall Time (tf):

29 ns

Maximum Gate-Emitter Threshold Voltage:

7.5 V

Maximum Gate-Emitter Voltage:

25 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

77 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

185 ns

Nominal Turn On Time (ton):

101 ns

Trade Compliance

FGH50T65UPD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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