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IRG4BC30S-STRLP

Infineon Technologies

IRG4BC30S-STRLP by Infineon Technologies

IRG4BC30S-STRLP by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 34A. It has a Nominal Turn Off Time of 1550ns and Nominal Turn On Time of 40ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. This IGBT comes in a RECTANGULAR package style with GULL WING terminals, suitable for surface mount assembly in various electronic devices.

Median Price

$1.586

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 877 parts In-Stock

1+ parts

-

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$1.560

1k+ parts

$1.290

10k+ parts

$1.150

877

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$1.560

$1.290

$1.150

Verical

USA . 877 parts In-Stock

1+ parts

-

100+ parts

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$1.613

10k+ parts

$1.438

877

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-

$1.613

$1.438

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$1.214

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100

$1.214

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Digiode

USA . 112 parts In-Stock

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$1.216

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$1.216

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Vyrian

USA . 4,696 parts In-Stock

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4,696

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DigiKey Marketplace

USA . 2,128 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 458 parts In-Stock

1+ parts

$1.090

100+ parts

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458

$1.090

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Corphita

USA . 335 parts In-Stock

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$1.152

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335

$1.152

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Aranea Global

USA . 1,000 parts In-Stock

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$1.189

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$1.142

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1,000

$1.189

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$1.142

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Argo Parts USA

USA . 3,031 parts In-Stock

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$1.214

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$1.214

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Continental Prestige Electronics

USA . 1,767 parts In-Stock

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$1.214

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$1.189

1,767

$1.214

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$1.189

Modulus Dynamics

Lithuania . 17,601 parts In-Stock

1+ parts

$1.686

100+ parts

$1.619

1k+ parts

$1.551

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17,601

$1.686

$1.619

$1.551

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Microchip USA

USA . 247 parts In-Stock

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$7.995

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$7.995

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AZTECH Wire

Italy . 745 parts In-Stock

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$16.020

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$16.020

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Perfect Parts

USA . 13,787 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,080 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,720 parts In-Stock

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Overview

Discover the power and reliability of the IRG4BC30S-STRLP from Infineon Technologies. As a leader in insulated gate bipolar transistors (IGBT), Infineon delivers top-quality products that ensure optimal performance in power control applications. With a maximum collector-emitter voltage of 600V and a nominal turn off time of 1550ns, this N-channel transistor is perfect for a wide range of uses. Whether you're looking to improve efficiency or enhance functionality, the IRG4BC30S-STRLP offers unmatched value and benefits to meet your needs. Experience the difference with Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides good thermal conductivity and insulation, making the product more durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs have lower on-state voltage drop and higher efficiency compared to P-channel IGBTs, making them suitable for power control applications.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easier to integrate into various power control systems.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT offers high efficiency and performance in managing power flows.

Surface Mount: YES

The surface mount capability makes it easier to solder and mount the IGBT onto circuit boards, saving space and simplifying assembly.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage allows for handling high voltage power control applications with ease and reliability.

Minimum Operating Temperature: -55 °C

The wide operating temperature range allows the IGBT to function effectively in various environments and conditions.

Maximum Collector Current (IC): 34 A

The high maximum collector current rating enables the IGBT to handle large currents, making it suitable for high power applications.

Nominal Turn On Time (ton): 40 ns

The fast turn on time ensures quick response and switching speed, making it ideal for applications requiring precise power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRG4BC30S-STRLP attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1550 ns

Nominal Turn On Time (ton):

40 ns

Trade Compliance

IRG4BC30S-STRLP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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