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IXBX75N170

IXYS Corporation

IXBX75N170 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1040 W; Maximum Collector Current (IC): 200 A; JESD-30 Code: R-PSIP-T3;

Median Price

$67.630

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 808 parts In-Stock

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$67.630

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$51.593

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Mouser Electronics

USA . 314 parts In-Stock

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$67.630

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314

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Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

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$55.872

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300

$55.872

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Ozdisan Elektronik

Türkiye . 10 parts In-Stock

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$79.523

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Rutronik

Germany . 180 parts In-Stock

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$75.980

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180

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Vyrian

USA . 42 parts In-Stock

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NAC Semi

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.594

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$0.541

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$0.487

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40

$0.594

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$0.487

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Aztec Data Supply Inc.

USA . 397 parts In-Stock

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$1.776

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$1.776

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AZTECH Wire

Italy . 411 parts In-Stock

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$10.038

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Semicontronic

India . 127 parts In-Stock

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$42.780

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$41.710

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$41.497

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$42.780

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$41.497

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Ampacity Inc.

Singapore . 72 parts In-Stock

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$42.780

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Corohmni

South Africa . 351 parts In-Stock

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$53.103

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Aranea Global

USA . 2,000 parts In-Stock

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$54.755

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$52.565

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Continental Prestige Electronics

USA . 3,840 parts In-Stock

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$55.872

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$54.755

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$54.755

Component Stockers USA

USA . 24 parts In-Stock

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$79.970

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Microchip USA

USA . 3,030 parts In-Stock

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$148.074

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iodParts Technologies Inc.

India . 7,154 parts In-Stock

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Argo Parts USA

USA . 4,555 parts In-Stock

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Alle Elektronik GmbH

Germany . 2,263 parts In-Stock

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2,263

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Perfect Parts

USA . 328 parts In-Stock

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328

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GreenTree Electronics

Israel . 50 parts In-Stock

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Authorized Procurement Solutions

USA . 30 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXBX75N170 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

840 ns

Nominal Turn On Time (ton):

277 ns

Trade Compliance

IXBX75N170 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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