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IXBX25N250

IXYS Corporation

IXBX25N250 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 55 A; Terminal Form: THROUGH-HOLE;

Median Price

$54.080

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 199 parts In-Stock

1+ parts

$49.440

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199

$49.440

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DigiKey

USA . 318 parts In-Stock

1+ parts

$58.720

100+ parts

$40.441

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318

$58.720

$40.441

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 60 parts In-Stock

1+ parts

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60

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NAC Semi

USA . 7 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 177 parts In-Stock

1+ parts

$28.020

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177

$28.020

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Continental Prestige Electronics

USA . 300 parts In-Stock

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$38.520

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$31.200

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300

$38.520

$31.200

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Component Stockers USA

USA . 625 parts In-Stock

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$40.520

100+ parts

$33.910

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625

$40.520

$33.910

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Microchip USA

USA . 7,793 parts In-Stock

1+ parts

$100.855

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7,793

$100.855

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Perfect Parts

USA . 364 parts In-Stock

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364

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iodParts Technologies Inc.

India . 210 parts In-Stock

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Authorized Procurement Solutions

USA . 180 parts In-Stock

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180

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Aranea Global

USA . 100 parts In-Stock

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100

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXBX25N250 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

2500 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

650 ns

Nominal Turn On Time (ton):

694 ns

Trade Compliance

IXBX25N250 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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