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IXBX25N250

Littelfuse

IXBX25N250 by Littelfuse

IXBX25N250 by Littelfuse is an N-CHANNEL IGBT with 3.3V VCEsat, 55A IC, and 2500V VCE. Ideal for POWER CONTROL applications, it has a 650ns toff and 694ns ton, operating b/w -55°C to 150°C.

Median Price

$54.080

Lifecycle Status

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Mouser Electronics

USA . 199 parts In-Stock

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$49.440

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DigiKey

USA . 318 parts In-Stock

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$58.720

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$40.441

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Nova Conductors

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Ampacity Inc.

Singapore . 177 parts In-Stock

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$28.020

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Continental Prestige Electronics

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$38.520

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$31.200

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Component Stockers USA

USA . 625 parts In-Stock

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$40.520

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$33.910

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Microchip USA

USA . 7,793 parts In-Stock

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$100.855

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Perfect Parts

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iodParts Technologies Inc.

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Overview

Experience unmatched performance and reliability with the Littelfuse IXBX25N250 Insulated Gate Bipolar Transistor. Designed with cutting-edge technology and precision engineering, this N-CHANNEL transistor is perfect for power control applications. With a maximum VCEsat of 3.3V and a maximum operating temperature of 150°C, this transistor delivers exceptional power dissipation of up to 300W. Whether you're in the automotive, industrial, or renewable energy industry, the IXBX25N250 provides unparalleled efficiency and durability. Trust Littelfuse for superior quality and innovation that exceeds your expectations. Unlock the full potential of your projects with the IXBX25N250 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

Enables efficient power control and performance in various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode for reverse current protection.

Transistor Application: POWER CONTROL

Designed for controlling high power applications effectively.

Maximum VCEsat: 3.3 V

Low voltage drop across collector-emitter junction leads to lower power losses and efficient operation.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into circuits.

Terminal Form: THROUGH-HOLE

Allows for secure and reliable connections on PCBs.

Nominal Turn Off Time (toff): 650 ns

Provides fast turn off speed for precise control in power switching applications.

No. of Terminals: 3

Simple and efficient connectivity in circuit design.

Maximum Power Dissipation (Abs): 300 W

Capable of handling high power levels for demanding applications.

Package Style (Meter): IN-LINE

Convenient for easy installation and connection in power circuits.

Maximum Operating Temperature: 150 °C

Suitable for operation in high temperature environments.

Maximum Collector-Emitter Voltage: 2500 V

Can handle high voltage applications with ease.

Transistor Element Material: SILICON

Highly reliable and efficient material for transistor construction.

Maximum Gate-Emitter Voltage: 20 V

Provides appropriate voltage levels for gate control in power circuits.

Minimum Operating Temperature: -55 °C

Capable of operating in low temperature environments without any issues.

Maximum Collector Current (IC): 55 A

Handles high current levels, suitable for power applications.

Maximum Gate-Emitter Threshold Voltage: 5 V

Defines the minimum voltage required to turn on the transistor, ensuring proper functionality.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance for long-lasting performance.

Terminal Position: SINGLE

Simplifies circuit connection and layout.

Case Connection: COLLECTOR

Specific connection point for easy integration into power circuits.

Nominal Turn On Time (ton): 694 ns

Fast turn on time for quick response in power switching applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXBX25N250 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

2500 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

650 ns

Nominal Turn On Time (ton):

694 ns

Maximum VCEsat:

3.3 V

Trade Compliance

IXBX25N250 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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