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SGP10N60RUFDTU

Onsemi

SGP10N60RUFDTU by Onsemi

SGP10N60RUFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 16A IC, and 75W Pd. Ideal for MOTOR CONTROL applications due to its single configuration with built-in diode. Features fast switching times: ton of 49ns and tf of 220ns.

Median Price

$1.570

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 502 parts In-Stock

1+ parts

$2.530

100+ parts

$1.680

1k+ parts

$1.190

10k+ parts

$1.070

502

$2.530

$1.680

$1.190

$1.070

Rochester

USA . 24,447 parts In-Stock

1+ parts

-

100+ parts

$1.570

1k+ parts

$1.300

10k+ parts

$1.160

24,447

-

$1.570

$1.300

$1.160

Farnell

UK . 23,682 parts In-Stock

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-

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$1.317

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23,682

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$1.317

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Verical

USA . 21,647 parts In-Stock

1+ parts

-

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$1.625

10k+ parts

$1.450

21,647

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-

$1.625

$1.450

DigiKey

USA . 17,000 parts In-Stock

1+ parts

-

100+ parts

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$1.080

10k+ parts

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17,000

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$1.080

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Flip Electronics (Authorized)

USA . 17,000 parts In-Stock

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17,000

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Digiode

USA . 1,150 parts In-Stock

1+ parts

$1.226

100+ parts

-

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1,150

$1.226

-

-

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$1.300

100+ parts

-

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100

$1.300

-

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Flip Electronics

USA . 17,000 parts In-Stock

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17,000

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DigiKey Marketplace

USA . 17,000 parts In-Stock

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17,000

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Vyrian

USA . 16,788 parts In-Stock

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16,788

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Cyclops Electronics Ltd

UK . 4,000 parts In-Stock

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4,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 16,764 parts In-Stock

1+ parts

$0.920

100+ parts

-

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16,764

$0.920

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Corohmni

South Africa . 362 parts In-Stock

1+ parts

$1.080

100+ parts

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362

$1.080

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Corphita

USA . 2,352 parts In-Stock

1+ parts

$1.161

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2,352

$1.161

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Argo Parts USA

USA . 4,984 parts In-Stock

1+ parts

$1.300

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4,984

$1.300

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Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$1.412

100+ parts

$1.285

1k+ parts

$1.158

10k+ parts

-

20

$1.412

$1.285

$1.158

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Continental Prestige Electronics

USA . 21,782 parts In-Stock

1+ parts

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$1.020

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21,782

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$1.020

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SupplyDigital Components

Austria . 7,098 parts In-Stock

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7,098

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Problanco Electronics

Mexico . 6,375 parts In-Stock

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Kulean Microsystems

USA . 5,330 parts In-Stock

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ChipstoGo Electronic ltd

UK . 4,000 parts In-Stock

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4,000

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,194 parts In-Stock

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Perfect Parts

USA . 2,029 parts In-Stock

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Supply Digital

USA . 1,777 parts In-Stock

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1,777

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 312 parts In-Stock

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312

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Netroflash

USA . 100 parts In-Stock

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100+ parts

$1.274

1k+ parts

$1.235

10k+ parts

$1.209

100

-

$1.274

$1.235

$1.209

Assy Fe

Spain . 3 parts In-Stock

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3

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Overview

Experience superior performance and reliability with the SGP10N60RUFDTU by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge Insulated Gate Bipolar Transistors (IGBT) like no other. Ideal for motor control applications, this N-Channel transistor offers a single configuration with a built-in diode for seamless integration. With a maximum power dissipation of 75W and a maximum operating temperature of 150°C, this transistor ensures efficiency and durability. Trust Onsemi to provide you with quality components that exceed expectations. Elevate your projects with the SGP10N60RUFDTU today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation for the transistor, ensuring safe and reliable operation.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have lower resistance and higher efficiency, making this product a good choice for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy and convenient circuit design, reducing the need for additional components.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance and efficiency in this usage scenario.

Maximum Fall Time (tf): 220 ns

Fast fall time ensures quick switching and response times, enhancing the overall performance of the transistor.

Nominal Turn Off Time (toff): 284 ns

Fast turn-off time contributes to efficient operation and helps prevent overheating.

Maximum Power Dissipation (Abs): 75 W

With a high power dissipation capability, this transistor can handle demanding applications without risk of damage.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, ensuring reliability in varying environmental conditions.

Maximum Collector-Emitter Voltage: 600 V

High voltage rating allows for use in a wide range of applications, providing versatility and flexibility.

Maximum Gate-Emitter Voltage: 20 V

Safe operating voltage for gate-emitter ensures protection against overvoltage conditions.

Maximum Collector Current (IC): 16 A

High collector current rating allows for handling of large current loads, making it suitable for motor control applications.

Maximum Gate-Emitter Threshold Voltage: 8 V

Threshold voltage within a suitable range for efficient control and operation.

Nominal Turn On Time (ton): 49 ns

Fast turn-on time ensures quick activation, improving response times and overall performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGP10N60RUFDTU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

220 ns

Maximum Gate-Emitter Threshold Voltage:

8 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

284 ns

Nominal Turn On Time (ton):

49 ns

Trade Compliance

SGP10N60RUFDTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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