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IHW30N160R5XKSA1

Infineon Technologies

IHW30N160R5XKSA1 by Infineon Technologies

IHW30N160R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max IC of 60A. It is designed for power control applications, featuring a built-in diode, 1600V max collector-emitter voltage, and 263W max power dissipation.

Median Price

$4.570

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,505 parts In-Stock

1+ parts

$2.190

100+ parts

$2.190

1k+ parts

$2.190

10k+ parts

-

1,505

$2.190

$2.190

$2.190

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Arrow

USA . 741 parts In-Stock

1+ parts

$4.282

100+ parts

$2.160

1k+ parts

$1.947

10k+ parts

-

741

$4.282

$2.160

$1.947

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Chip1Stop

Japan . 2,781 parts In-Stock

1+ parts

$4.570

100+ parts

$2.520

1k+ parts

-

10k+ parts

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2,781

$4.570

$2.520

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DigiKey

USA . 3,192 parts In-Stock

1+ parts

$4.580

100+ parts

$2.542

1k+ parts

$1.764

10k+ parts

$1.625

3,192

$4.580

$2.542

$1.764

$1.625

Farnell

UK . 8,885 parts In-Stock

1+ parts

$4.630

100+ parts

$2.170

1k+ parts

$1.720

10k+ parts

-

8,885

$4.630

$2.170

$1.720

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Element14

Singapore . 1,803 parts In-Stock

1+ parts

$5.280

100+ parts

$2.737

1k+ parts

$2.566

10k+ parts

-

1,803

$5.280

$2.737

$2.566

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Distrelec

Netherlands . 40 parts In-Stock

1+ parts

$7.173

100+ parts

-

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40

$7.173

-

-

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EBV Elektronik

Germany . 4,080 parts In-Stock

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-

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4,080

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RS (Exports)

UK . 3,395 parts In-Stock

1+ parts

-

100+ parts

$3.042

1k+ parts

$2.848

10k+ parts

-

3,395

-

$3.042

$2.848

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Verical

USA . 1,505 parts In-Stock

1+ parts

-

100+ parts

$3.067

1k+ parts

$2.822

10k+ parts

-

1,505

-

$3.067

$2.822

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Schukat

Germany . 23 parts In-Stock

1+ parts

$3.740

100+ parts

$2.620

1k+ parts

-

10k+ parts

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23

$3.740

$2.620

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-

Digiode

USA . 812 parts In-Stock

1+ parts

$3.977

100+ parts

-

1k+ parts

-

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812

$3.977

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-

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TME

Poland . 23 parts In-Stock

1+ parts

$4.300

100+ parts

-

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-

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23

$4.300

-

-

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$4.308

100+ parts

-

1k+ parts

-

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500

$4.308

-

-

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Chip Stock

USA . 51,981 parts In-Stock

1+ parts

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100+ parts

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51,981

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ComSIT Distribution GmbH

Germany . 12,376 parts In-Stock

1+ parts

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12,376

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-

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NAC Semi

USA . 8,160 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$5.850

10k+ parts

$5.270

8,160

-

-

$5.850

$5.270

Vyrian

USA . 2,422 parts In-Stock

1+ parts

-

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2,422

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-

-

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IBS Electronics

USA . 180 parts In-Stock

1+ parts

-

100+ parts

$2.856

1k+ parts

$2.744

10k+ parts

$2.702

180

-

$2.856

$2.744

$2.702

Rutronik

Germany . 60 parts In-Stock

1+ parts

-

100+ parts

$2.180

1k+ parts

$1.980

10k+ parts

-

60

-

$2.180

$1.980

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Micros

Poland . 30 parts In-Stock

1+ parts

-

100+ parts

$5.002

1k+ parts

-

10k+ parts

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30

-

$5.002

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 20,632 parts In-Stock

1+ parts

$0.423

100+ parts

$0.423

1k+ parts

$0.423

10k+ parts

-

20,632

$0.423

$0.423

$0.423

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Corohmni

South Africa . 412 parts In-Stock

1+ parts

$1.278

100+ parts

-

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-

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412

$1.278

-

-

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Semicontronic

India . 3,848 parts In-Stock

1+ parts

$1.720

100+ parts

$1.677

1k+ parts

$1.668

10k+ parts

-

3,848

$1.720

$1.677

$1.668

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Aztec Data Supply Inc.

USA . 1,400 parts In-Stock

1+ parts

$1.778

100+ parts

-

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1,400

$1.778

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Ampacity Inc.

Singapore . 2,684 parts In-Stock

1+ parts

$1.950

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2,684

$1.950

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Argo Parts USA

USA . 2,565 parts In-Stock

1+ parts

$3.717

100+ parts

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2,565

$3.717

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Corphita

USA . 522 parts In-Stock

1+ parts

$3.767

100+ parts

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522

$3.767

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Bastille Electronics

Australia . 73 parts In-Stock

1+ parts

$4.308

100+ parts

$4.093

1k+ parts

$3.888

10k+ parts

$3.834

73

$4.308

$4.093

$3.888

$3.834

Continental Prestige Electronics

USA . 5,604 parts In-Stock

1+ parts

$5.320

100+ parts

$2.540

1k+ parts

$2.420

10k+ parts

-

5,604

$5.320

$2.540

$2.420

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Microchip USA

USA . 3,556 parts In-Stock

1+ parts

$16.160

100+ parts

$15.930

1k+ parts

$15.810

10k+ parts

$15.690

3,556

$16.160

$15.930

$15.810

$15.690

Perfect Parts

USA . 18,032 parts In-Stock

1+ parts

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18,032

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-

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RC Electronics

USA . 8,613 parts In-Stock

1+ parts

-

100+ parts

$3.140

1k+ parts

$2.870

10k+ parts

$2.780

8,613

-

$3.140

$2.870

$2.780

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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-

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Eastek

USA . 1,200 parts In-Stock

1+ parts

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1,200

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GreenTree Electronics

Israel . 270 parts In-Stock

1+ parts

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270

-

-

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iodParts Technologies Inc.

India . 137 parts In-Stock

1+ parts

-

100+ parts

$3.162

1k+ parts

-

10k+ parts

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137

-

$3.162

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-

Overview

Experience superior power control with the IHW30N160R5XKSA1 Insulated Gate Bipolar Transistor by Infineon Technologies. Known for their top-quality components, Infineon offers a single N-channel IGBT with a built-in diode that is perfect for a wide range of power control applications. With a maximum VCEsat of 2.15V and a maximum operating temperature of 175°C, this IGBT provides excellent performance and reliability. Whether you're looking to optimize efficiency in industrial equipment or enhance power conversion in renewable energy systems, the IHW30N160R5XKSA1 delivers exceptional value, benefits, and advantages to customers seeking top-notch power control solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material provides good insulation and protection for the internal components of the IGBT, making it durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses, higher efficiency, and faster switching speeds compared to P-channel IGBTs, making them suitable for high power applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is capable of handling high current and voltage levels efficiently and effectively.

Maximum VCEsat: 2.15 V

The low VCEsat value indicates minimal voltage drop across the collector-emitter junction when the IGBT is conducting, resulting in lower power dissipation and higher efficiency.

Maximum Power Dissipation (Abs): 263 W

With a high maximum power dissipation capacity, this IGBT can handle large amounts of power without overheating, making it suitable for high power applications.

Maximum Collector-Emitter Voltage: 1600 V

The high maximum collector-emitter voltage rating allows this IGBT to be used in applications where high voltage levels are present, providing reliable performance under high voltage conditions.

Maximum Gate-Emitter Voltage: 20 V

The 20V maximum gate-emitter voltage ensures safe and reliable operation of the IGBT's gate control, protecting it from damage due to overvoltage situations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IHW30N160R5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1600 V

Maximum Gate-Emitter Threshold Voltage:

5.8 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-61249-2-21

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

411 ns

Maximum VCEsat:

2.15 V

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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