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FF300R12KT4HOSA1

Infineon Technologies

FF300R12KT4HOSA1 by Infineon Technologies

FF300R12KT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 1200V, and a max current of 450A. It has a nominal turn-off time of 720ns and turn-on time of 230ns. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.

Median Price

$111.030

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Farnell

UK . 20 parts In-Stock

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$96.980

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$96.980

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DigiKey

USA . 124 parts In-Stock

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$110.060

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$110.060

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Chip1Stop

Japan . 11 parts In-Stock

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$112.000

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$112.000

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Verical

USA . 11 parts In-Stock

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$112.000

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$112.000

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Element14

Singapore . 16 parts In-Stock

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$226.480

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$226.480

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Future Electronics

Canada . 20 parts In-Stock

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$96.890

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$96.890

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RS (Exports)

UK . 3 parts In-Stock

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$210.576

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$210.576

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Rochester

USA . 1 parts In-Stock

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$92.680

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$82.930

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$78.050

1

-

$92.680

$82.930

$78.050

Distributors (In-Stock)

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Bristol Electronics

USA . 7 parts In-Stock

1+ parts

$81.154

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7

$81.154

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Digiode

USA . 924 parts In-Stock

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$86.726

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924

$86.726

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Nova Conductors

Japan . 300 parts In-Stock

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$166.507

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$166.507

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Chip Stock

USA . 3,300 parts In-Stock

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Vyrian

USA . 2,684 parts In-Stock

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Rutronik

Germany . 60 parts In-Stock

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IBS Electronics

USA . 20 parts In-Stock

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$141.849

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Dan-Mar Components

USA . 7 parts In-Stock

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Modulus Dynamics

Lithuania . 9,329 parts In-Stock

1+ parts

$0.603

100+ parts

$0.579

1k+ parts

$0.555

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9,329

$0.603

$0.579

$0.555

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Corohmni

South Africa . 36 parts In-Stock

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$1.095

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$1.095

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Aztec Data Supply Inc.

USA . 269 parts In-Stock

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$1.460

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269

$1.460

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$1.715

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$1.629

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$1.629

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2,500

$1.715

$1.629

$1.629

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AZTECH Wire

Italy . 616 parts In-Stock

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$5.939

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$5.939

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Ampacity Inc.

Singapore . 31 parts In-Stock

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$77.600

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Corphita

USA . 773 parts In-Stock

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$82.161

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Continental Prestige Electronics

USA . 7 parts In-Stock

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$138.980

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Aranea Global

USA . 50 parts In-Stock

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$163.177

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$156.650

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$163.177

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Semicontronic

India . 31 parts In-Stock

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$168.890

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$164.668

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$163.823

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Microchip USA

USA . 6,672 parts In-Stock

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Argo Parts USA

USA . 2,617 parts In-Stock

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GreenTree Electronics

Israel . 500 parts In-Stock

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Perfect Parts

USA . 34 parts In-Stock

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Overview

Discover the Infineon Technologies FF300R12KT4HOSA1, a high-quality Insulated Gate Bipolar Transistor designed for efficiency and reliability. With 2 elements and a built-in diode, this N-CHANNEL transistor offers superior performance in various applications. From power supplies to motor control, this center tap configuration delivers exceptional value with its fast turn-on/off times and high collector current capacity. Trust in Infineon's expertise to bring you cutting-edge technology that ensures optimal functionality and durability. Elevate your projects with the FF300R12KT4HOSA1 and experience the difference.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally have lower on-state voltage drop and higher efficiency compared to P-channel IGBTs, making them a preferred choice for many high-power applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for higher voltage handling capabilities and improved performance in high-power applications that require precise control over switching.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum voltage rating makes this IGBT suitable for applications requiring high voltage switching, such as power supplies and motor control.

Maximum Collector Current (IC): 450 A

With a high collector current rating, this IGBT can handle large currents and is suitable for high-power applications, such as inverters and welding equipment.

Nominal Turn Off Time (toff): 720 ns

The relatively fast turn-off time allows for efficient switching and reduces power loss, making this IGBT suitable for high-frequency applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the IGBT can withstand elevated temperatures in industrial environments without sacrificing performance or reliability.

Nominal Turn On Time (ton): 230 ns

The fast turn-on time contributes to efficient switching and enables high-speed operation in applications requiring rapid response times.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FF300R12KT4HOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

720 ns

Nominal Turn On Time (ton):

230 ns

Trade Compliance

FF300R12KT4HOSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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