Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Infineon Technologies' FF300R17KE3HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and 1700V max collector-emitter voltage. It has a toff of 1200ns and ton of 400ns, suitable for high-power applications like industrial motor drives due to its 404A max collector current capacity.
Median Price
$212.720
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Vyrian
TME
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$0.502
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AZTECH Wire
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$161.091
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$233.124
Netroflash
QUARKTWIN TECHNOLOGY LTD
Microchip USA
Authorized Procurement Solutions
Argo Parts USA
N-CHANNEL type IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power electronics applications.
This configuration allows for higher voltage handling capacity and improved performance in high-power applications.
Having 2 elements increases the current carrying capacity and allows for better distribution of power within the device.
The fast turn-off time ensures efficient switching and reduces power loss during operation.
The high operating temperature range ensures reliability and performance even in demanding environments.
The high voltage rating allows for use in high-power applications without risk of damage to the device.
The high current carrying capacity makes this IGBT suitable for high-power industrial applications.
The fast turn-on time improves efficiency and allows for precise control of power flow.
Insulated Gate Bipolar Transistors (IGBT) FF300R17KE3HOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
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FF300R17KE3HOSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
M24308/2-1F
Defense Logistics Agency
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Type: CABLE AND PANEL; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Empty Shell: NO;
BSS138W-7-F
Multicomp Pro
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
BSS138
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;
2N2222A
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
ULN2803A
YOUTAI SEMICONDUCTOR CO LTD
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;
M39029/58-360
TE Connectivity
TE Connectivity's M39029/58-360 is a CRIMP terminal backshell for 22-28 AWG wires, rated at 5A. Ideal for male contacts in Mil-Spec applications, it offers a cross-section area of 0.34 mm2 and ensures secure connections in demanding environments.
E8WSDC12-32.768KTR
Abracon
Abracon's E8WSDC12-32.768KTR crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and communication systems.
LM358D-T
NXP Semiconductors
LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.
1N4148WT
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;
IRLML6401TRPBF
Infineon Technologies
IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
STM32H753IIT6
STMicroelectronics
STM32H753IIT6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs and 2-Ch 12-Bit DACs, suitable for industrial applications requiring high-speed data processing and connectivity via CAN, ETHERNET, USB, and more.
LM317T
Texas Instruments
LM317T by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. Operating temperature ranges from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. With a max output current of 1.5A, this through-hole package regulator is ideal for power supply designs where adjustable voltage levels are needed.
LM358N
Silicon Group
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LL4148
Continental Device India
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148W-T
Micro Commercial Components
1N4148W-T by Micro Commercial Components is a single rectifier diode with a max reverse recovery time of 0.004 us. It operates b/w -55 to 150 °C and has a max output current of 0.15 A. Ideal for applications requiring fast switching speeds in small outline packages.
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
Onsemi
Semiconductor Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM555CM
Intersil
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
FS450R17KE3
Eupec & Kg
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 605 A; No. of Terminals: 29; Terminal Position: UPPER;
IXYN100N120C3H1
Littelfuse
IXYN100N120C3H1 by Littelfuse is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 134A max collector current, and 690W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 265ns.
IXXX110N65B4H1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 880 W; Maximum Collector Current (IC): 250 A; Nominal Turn On Time (ton): 65 ns;
SKM400GB126D
Semikron International
Semikron International's SKM400GB126D is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.1V and Max Collector-Emitter Voltage of 1200V, it ensures efficient performance. With fast Nominal Turn Off Time (toff) of 760ns, this device operates in temperatures ranging from -40 to 150 °C, making it suitable for various industrial power systems.
APT100GN60LDQ4G
Microchip Technology
Microchip Technology's APT100GN60LDQ4G is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 229A max collector current. Ideal for power control applications, it features a built-in diode, 96ns turn-on time, and 435ns turn-off time. Suitable for high-power systems requiring up to 625W dissipation in a flange mount package.
IKW50N60TFKSA1
IKW50N60TFKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 80A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package style with through-hole terminals, suitable for flange mount installations at temperatures up to 150°C.
IRG4BC40KPBF
IRG4BC40KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 42A max collector current. It has a single configuration for MOTOR CONTROL applications, offering a max power dissipation of 160W. The transistor features a package style of FLANGE MOUNT and can operate at temperatures up to 150°C.
IXDR35N60BD1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 38 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSIP-T3;
AUIRGDC0250
AUIRGDC0250 by Infineon Technologies is an N-CHANNEL IGBT with a max fall time of 1371 ns, power dissipation of 543 W, and max operating temp of 150°C. It's ideal for high-power applications requiring a collector-emitter voltage up to 1200 V and collector current up to 141 A.
FZ1500R33HL3BPSA1
FZ1500R33HL3BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 3300V max collector-emitter voltage. It features a complex configuration, 4700ns turn-off time, and 1050ns turn-on time. Ideal for power control applications due to its isolated case connection and flange mount package style.
IRG4PH20KPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 24 W; Maximum Collector Current (IC): 11 A; Terminal Form: THROUGH-HOLE;
IRG4BC30FD-SPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY;
FGH40N65UFDTU_F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Transistor Application: POWER CONTROL;
GT20J321
Toshiba
Toshiba GT20J321 is an N-CHANNEL IGBT with 600V max collector-emitter voltage, ideal for power control applications. It features a built-in diode, 20A max collector current (IC), and 45W max power dissipation. With a turn-off time of 340ns and turn-on time of 170ns, it offers efficient performance in high-power systems.
F475R12KS4B11BOSA1
F475R12KS4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 390ns, making it ideal for power control applications. The transistor is UL approved and features a built-in diode, thermistor, and isolated case connection for efficient performance.
IXYF40N450
Littelfuse IXYF40N450 is an N-CHANNEL IGBT with 4500V VCEsat, 60A IC, and 290W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 1128ns and high operating temperature range from -55°C to 150°C. Package style is IN-LINE with PLASTIC/EPOXY body material.
HGTG10N120BND
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Nominal Turn Off Time (toff): 190 ns; Terminal Position: SINGLE;
IGP15N60TXKSA1
Infineon's IGP15N60TXKSA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 30A max collector current. It has a turn-off time of 291ns and turn-on time of 32ns, making it ideal for power control applications. The transistor comes in a plastic/epoxy package with through-hole terminals and can operate at temperatures up to 175°C.
FGL60N100BNTD
FGL60N100BNTD by Onsemi is an N-CHANNEL IGBT with 1000V VCE, 60A IC, and 460ns ton. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
F475R06W1E3BOMA1
Infineon's F475R06W1E3BOMA1 IGBT features N-CHANNEL polarity, 600V max. collector-emitter voltage, and 100A max. collector current. Ideal for power control applications with a complex configuration, it offers fast turn-off time of 330ns and turn-on time of 45ns in a rectangular package with flange mount style.
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FF300R12ME4BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; No. of Terminals: 11; Qualification: Not Qualified;
FF300R12KT4HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Terminal Position: UPPER; Package Shape: RECTANGULAR;
FF300R12KS4HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 370 A; Package Shape: RECTANGULAR; Nominal Turn On Time (ton): 180 ns;
FF300R12MS4BOSA1
FF300R12MS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 1200V, and a current rating of 370A. It has a turn-off time of 590ns and a turn-on time of 180ns, making it suitable for high-power applications like industrial motor drives and renewable energy systems.
FF300R12ME4B11BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
FF300R12KE3HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 440 A; Nominal Turn On Time (ton): 400 ns; No. of Terminals: 7;
FF300R17ME4BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 375 A; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Terminals: 11;
FF300R12ME4PB11BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; JESD-30 Code: R-XUFM-X11; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Threshold Voltage: 6.4 V;
FF300R12KE4HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 460 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: ISOLATED;
FF300R12KT3HOSA1
FF300R12KT3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and current of 480A, making it ideal for POWER CONTROL applications. With a turn-off time of 680ns and turn-on time of 215ns, this RECTANGULAR package transistor operates at temperatures up to 150°C.
FF300R12KE4B2HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 460 A; Case Connection: ISOLATED; Maximum Collector-Emitter Voltage: 1200 V;
FF300R12KS4PHOSA1
FF300R12KS4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 590ns, making it ideal for POWER CONTROL applications. This UL APPROVED transistor operates from -40°C with a fast Nominal Turn On Time of 180ns.
FF300R12ME3BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 500 A; No. of Terminals: 11; Terminal Form: UNSPECIFIED;
FF300R12KT3EHOSA1
N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 480 A; Reference Standard: UL RECOGNIZED; Package Body Material: UNSPECIFIED;
FF300R06KE3HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 400 A; No. of Terminals: 7; Package Style (Meter): FLANGE MOUNT;
FF300R07KE4HOSA1
N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 365 A; JESD-30 Code: R-XUFM-X7; Peak Reflow Temperature (C): NOT SPECIFIED;
FF300R12KE4
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1600 W; Maximum Collector Current (IC): 460 A; Package Shape: RECTANGULAR;
FF300R07ME4
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Transistor Application: POWER CONTROL; Nominal Turn On Time (ton): 138 ns;
FF300R12KE4_B2
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1600 W; Maximum Collector Current (IC): 460 A; No. of Terminals: 7;
FF300R17KE3
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 404 A; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;
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