Loading...

FF300R12KE4B2HOSA1

Infineon Technologies

FF300R12KE4B2HOSA1 by Infineon Technologies

Infineon's FF300R12KE4B2HOSA1 is a N-CHANNEL IGBT with 1200V VCE, 460A IC, and 800ns toff. Ideal for power control applications, it features series connected elements in a rectangular package with built-in diode. Recognized by UL, this transistor offers fast turn-on time of 325ns.

Median Price

$170.391

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 126 parts In-Stock

1+ parts

$153.016

100+ parts

-

1k+ parts

-

10k+ parts

-

126

$153.016

-

-

-

Nova Conductors

Japan . 39 parts In-Stock

1+ parts

$187.765

100+ parts

-

1k+ parts

-

10k+ parts

-

39

$187.765

-

-

-

Vyrian

USA . 5,234 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,234

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 407 parts In-Stock

1+ parts

$15.776

100+ parts

-

1k+ parts

-

10k+ parts

-

407

$15.776

-

-

-

Ampacity Inc.

Singapore . 2 parts In-Stock

1+ parts

$136.910

100+ parts

-

1k+ parts

-

10k+ parts

-

2

$136.910

-

-

-

Semicontronic

India . 2 parts In-Stock

1+ parts

$136.910

100+ parts

$133.487

1k+ parts

$132.803

10k+ parts

-

2

$136.910

$133.487

$132.803

-

Modulus Dynamics

Lithuania . 15,466 parts In-Stock

1+ parts

$140.060

100+ parts

$134.458

1k+ parts

$128.855

10k+ parts

-

15,466

$140.060

$134.458

$128.855

-

Corphita

USA . 745 parts In-Stock

1+ parts

$144.963

100+ parts

-

1k+ parts

-

10k+ parts

-

745

$144.963

-

-

-

Component Stockers USA

USA . 1 parts In-Stock

1+ parts

$157.530

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$157.530

-

-

-

Continental Prestige Electronics

USA . 3,709 parts In-Stock

1+ parts

$187.765

100+ parts

-

1k+ parts

-

10k+ parts

$184.010

3,709

$187.765

-

-

$184.010

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$187.765

100+ parts

-

1k+ parts

$178.377

10k+ parts

$174.621

1,000

$187.765

-

$178.377

$174.621

QUARKTWIN TECHNOLOGY LTD

USA . 10,506 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,506

-

-

-

-

Microchip USA

USA . 6,097 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,097

-

-

-

-

Argo Parts USA

USA . 1,352 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,352

-

-

-

-

Overview

Unlock the power of advanced technology with the FF300R12KE4B2HOSA1 by Infineon Technologies, a leading manufacturer in the electronics industry. This Insulated Gate Bipolar Transistor (IGBT) offers superior performance and reliability for power control applications. With a maximum collector-emitter voltage of 1200V and a nominal turn-off time of 800ns, this transistor delivers exceptional efficiency and precision. Trust in the quality and innovation of Infineon Technologies to enhance your projects and elevate your results. Experience the difference with the FF300R12KE4B2HOSA1 – where excellence meets cutting-edge technology.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are commonly preferred for high-power applications due to their superior performance and efficiency compared to P-CHANNEL IGBTs.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for enhanced power control and reliability in various applications, making the IGBT a versatile and efficient choice.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT offers efficient and precise control over power levels, making it ideal for high-power systems.

Package Shape: RECTANGULAR

The rectangular package shape provides ease of mounting and installation, making it convenient for integrating the IGBT into different systems.

Nominal Turn Off Time (toff): 800 ns

With a relatively fast turn-off time, this IGBT allows for quick switching and control of power levels, contributing to overall system performance and efficiency.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum voltage rating ensures the IGBT can handle high voltage levels, making it suitable for demanding applications where voltage spikes may occur.

Maximum Collector Current (IC): 460 A

With a high maximum collector current rating, this IGBT can handle large amounts of current, making it suitable for high-power applications that require robust performance.

Nominal Turn On Time (ton): 325 ns

The fast turn-on time of this IGBT allows for swift activation and control of power, contributing to improved system response times and efficiency.

Reference Standard: UL RECOGNIZED

Being UL recognized assures users that this IGBT meets industry safety and quality standards, providing peace of mind when integrating it into various systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FF300R12KE4B2HOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

800 ns

Nominal Turn On Time (ton):

325 ns

Trade Compliance

FF300R12KE4B2HOSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20