Loading...

FF300R12KT3HOSA1

Infineon Technologies

FF300R12KT3HOSA1 by Infineon Technologies

FF300R12KT3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and current of 480A, making it ideal for POWER CONTROL applications. With a turn-off time of 680ns and turn-on time of 215ns, this RECTANGULAR package transistor operates at temperatures up to 150°C.

Median Price

$152.460

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 3 parts In-Stock

1+ parts

$132.330

100+ parts

-

1k+ parts

-

10k+ parts

-

3

$132.330

-

-

-

Rochester

USA . 191 parts In-Stock

1+ parts

$134.380

100+ parts

$126.320

1k+ parts

$118.250

10k+ parts

-

191

$134.380

$126.320

$118.250

-

Arrow

USA . 8 parts In-Stock

1+ parts

$148.920

100+ parts

-

1k+ parts

-

10k+ parts

-

8

$148.920

-

-

-

Chip1Stop

Japan . 8 parts In-Stock

1+ parts

$156.000

100+ parts

-

1k+ parts

-

10k+ parts

-

8

$156.000

-

-

-

Element14

Singapore . 3 parts In-Stock

1+ parts

$249.380

100+ parts

-

1k+ parts

-

10k+ parts

-

3

$249.380

-

-

-

DigiKey

USA . 186 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

186

-

-

-

-

Verical

USA . 176 parts In-Stock

1+ parts

-

100+ parts

$157.900

1k+ parts

$147.813

10k+ parts

-

176

-

$157.900

$147.813

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 730 parts In-Stock

1+ parts

$125.714

100+ parts

-

1k+ parts

-

10k+ parts

-

730

$125.714

-

-

-

Nova Conductors

Japan . 17 parts In-Stock

1+ parts

$186.550

100+ parts

-

1k+ parts

-

10k+ parts

-

17

$186.550

-

-

-

Vyrian

USA . 6,945 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,945

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 20,449 parts In-Stock

1+ parts

$0.688

100+ parts

$0.660

1k+ parts

$0.633

10k+ parts

-

20,449

$0.688

$0.660

$0.633

-

AZTECH Wire

Italy . 890 parts In-Stock

1+ parts

$12.281

100+ parts

-

1k+ parts

-

10k+ parts

-

890

$12.281

-

-

-

Semicontronic

India . 88 parts In-Stock

1+ parts

$112.480

100+ parts

$109.668

1k+ parts

$109.106

10k+ parts

-

88

$112.480

$109.668

$109.106

-

Ampacity Inc.

Singapore . 87 parts In-Stock

1+ parts

$112.480

100+ parts

-

1k+ parts

-

10k+ parts

-

87

$112.480

-

-

-

Corphita

USA . 119 parts In-Stock

1+ parts

$119.097

100+ parts

-

1k+ parts

-

10k+ parts

-

119

$119.097

-

-

-

Continental Prestige Electronics

USA . 4 parts In-Stock

1+ parts

$142.990

100+ parts

-

1k+ parts

-

10k+ parts

-

4

$142.990

-

-

-

Microchip USA

USA . 6,825 parts In-Stock

1+ parts

$321.435

100+ parts

-

1k+ parts

-

10k+ parts

-

6,825

$321.435

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 10,656 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,656

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Argo Parts USA

USA . 1,989 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,989

-

-

-

-

Perfect Parts

USA . 11 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11

-

-

-

-

Overview

Harness the power of cutting-edge technology with the FF300R12KT3HOSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like no other. From power control to industrial applications, this N-CHANNEL transistor offers unparalleled performance and reliability. With a series-connected, center tap configuration and built-in diode, this product provides maximum efficiency and safety. Experience seamless operation and enhanced productivity with the FF300R12KT3HOSA1, designed to exceed your expectations. Elevate your projects with the best in the business - choose Infineon Technologies.

Feature Benefit Bullets

Polarity

N-CHANNEL - Provides high efficiency and fast switching speeds, ideal for power control applications.

Configuration

SERIES CONNECTED, CENTER TAP - Allows for precise control and high power handling capabilities in a compact design.

Transistor Application

POWER CONTROL - Designed specifically for power control applications, ensuring reliable performance.

Package Shape

RECTANGULAR - Offers ease of mounting and thermal dissipation, suitable for high power applications.

No. of Elements

2 - Provides redundancy and higher reliability in power control circuits.

Nominal Turn Off Time (toff)

680 ns - Fast turn-off time increases efficiency and reduces power loss during switching.

No. of Terminals

7 - Provides multiple connection points for easy integration into circuit designs.

Package Style (Meter)

FLANGE MOUNT - Allows for easy installation and secure mounting in various applications.

Maximum Operating Temperature

150 °C - Can operate in high temperature environments without compromising performance.

Maximum Collector-Emitter Voltage

1200 V - Offers high voltage handling capability for demanding power control applications.

Transistor Element Material

SILICON - Provides high reliability and stable performance over a wide temperature range.

Maximum Collector Current (IC)

480 A - Can handle high current loads with ease, suitable for high power applications.

Terminal Position

UPPER - Simplifies circuit layout and connection, making installation hassle-free.

Case Connection

ISOLATED - Ensures safety and protection against electrical faults in the system.

Nominal Turn On Time (ton)

215 ns - Fast turn-on time allows for quick response and precise control in power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FF300R12KT3HOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

680 ns

Nominal Turn On Time (ton):

215 ns

Trade Compliance

FF300R12KT3HOSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20