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IXGH100N30C3

Littelfuse

IXGH100N30C3 by Littelfuse

IXGH100N30C3 by Littelfuse is an N-CHANNEL IGBT with 300V VCE, 75A IC, and 460W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 1.85V and fast turn-off time of 244ns. Package style is FLANGE MOUNT with a max operating temp of 150°C.

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Vyrian

USA . 749 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Corohmni

South Africa . 100 parts In-Stock

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$0.562

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$0.562

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$0.769

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$0.700

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$0.631

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Aztec Data Supply Inc.

USA . 3,284 parts In-Stock

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$1.140

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Andel Nordic

Denmark . 323 parts In-Stock

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$9.826

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$9.433

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AZTECH Wire

Italy . 639 parts In-Stock

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$11.195

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Semicontronic

India . 1,610 parts In-Stock

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$33.050

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$32.224

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$32.058

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Ampacity Inc.

Singapore . 1,463 parts In-Stock

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$50.050

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Continental Prestige Electronics

USA . 2,640 parts In-Stock

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Authorized Procurement Solutions

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Glotronic Ltd.

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Argo Parts USA

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Australia . 10 parts In-Stock

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Overview

Unlock the power of advanced technology with the IXGH100N30C3 by Littelfuse, a top-tier manufacturer known for quality and innovation. As part of the Insulated Gate Bipolar Transistors (IGBT) category, this product offers unparalleled performance in power control applications. With a single configuration and a maximum VCEsat of 1.85V, customers can trust in the reliability and efficiency of this transistor. Experience seamless operation and optimized power dissipation with a maximum of 460W. Trust Littelfuse to deliver cutting-edge solutions that exceed expectations and drive success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and heat-resistance, making the product suitable for various environments.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally offer better performance and efficiency compared to P-channel types, making this product a suitable choice for power control applications.

Configuration: SINGLE

The single configuration simplifies the setup and operation of the IGBT, making it easy to integrate into power control systems.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT provides reliable and efficient performance in managing power flow.

Maximum VCEsat: 1.85 V

The low saturation voltage helps reduce power losses and improves the overall efficiency of the power control system.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement within the system, optimizing space utilization.

Nominal Turn Off Time (toff): 244 ns

The fast turn-off time ensures quick and precise control over power flow, enhancing the performance of the power control system.

Maximum Power Dissipation (Abs): 460 W

With a high power dissipation capacity, this IGBT can handle heavy loads and operate reliably even under high power conditions.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the IGBT to function effectively in various temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 300 V

The high collector-emitter voltage rating makes this IGBT suitable for applications that require high voltage handling capabilities.

Maximum Collector Current (IC): 75 A

The high collector current rating enables the IGBT to handle heavy current loads, making it suitable for high-power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGH100N30C3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

244 ns

Nominal Turn On Time (ton):

61 ns

Maximum VCEsat:

1.85 V

Trade Compliance

IXGH100N30C3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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