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FP20R06W1E3BOMA1

Infineon Technologies

FP20R06W1E3BOMA1 by Infineon Technologies

FP20R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, designed for POWER CONTROL applications. It features a max Collector-Emitter Voltage of 600V, Nominal Turn Off Time of 250ns, and Max Collector Current of 27A. This COMPLEX transistor has a rectangular package style and operates at temperatures up to 175°C.

Median Price

$26.113

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 24 parts In-Stock

1+ parts

$25.600

100+ parts

-

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-

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24

$25.600

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Arrow

USA . 24 parts In-Stock

1+ parts

$26.539

100+ parts

-

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-

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24

$26.539

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-

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Rochester

USA . 90 parts In-Stock

1+ parts

-

100+ parts

$20.890

1k+ parts

$18.690

10k+ parts

$17.590

90

-

$20.890

$18.690

$17.590

Verical

USA . 72 parts In-Stock

1+ parts

-

100+ parts

$26.113

1k+ parts

$23.363

10k+ parts

$21.988

72

-

$26.113

$23.363

$21.988

RS (Exports)

UK . 24 parts In-Stock

1+ parts

-

100+ parts

$39.260

1k+ parts

$35.989

10k+ parts

-

24

-

$39.260

$35.989

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 445 parts In-Stock

1+ parts

$22.030

100+ parts

-

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445

$22.030

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Nova Conductors

Japan . 28 parts In-Stock

1+ parts

$35.718

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28

$35.718

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TodayComponents

USA . 100 parts In-Stock

1+ parts

$41.120

100+ parts

$37.170

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100

$41.120

$37.170

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Chip Stock

USA . 4,092 parts In-Stock

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4,092

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Vyrian

USA . 3,725 parts In-Stock

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3,725

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 399 parts In-Stock

1+ parts

$0.364

100+ parts

-

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399

$0.364

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Modulus Dynamics

Lithuania . 22,854 parts In-Stock

1+ parts

$0.503

100+ parts

$0.483

1k+ parts

$0.463

10k+ parts

-

22,854

$0.503

$0.483

$0.463

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Aztec Data Supply Inc.

USA . 287 parts In-Stock

1+ parts

$1.025

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287

$1.025

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Ampacity Inc.

Singapore . 47 parts In-Stock

1+ parts

$11.050

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47

$11.050

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Semicontronic

India . 47 parts In-Stock

1+ parts

$11.050

100+ parts

$10.774

1k+ parts

$10.718

10k+ parts

-

47

$11.050

$10.774

$10.718

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AZTECH Wire

Italy . 467 parts In-Stock

1+ parts

$12.928

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467

$12.928

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Corphita

USA . 520 parts In-Stock

1+ parts

$20.871

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520

$20.871

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Continental Prestige Electronics

USA . 16 parts In-Stock

1+ parts

$29.680

100+ parts

$24.730

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16

$29.680

$24.730

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Component Stockers USA

USA . 203 parts In-Stock

1+ parts

$30.930

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203

$30.930

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$35.004

100+ parts

-

1k+ parts

$33.603

10k+ parts

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50

$35.004

-

$33.603

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Advanced Electronics

New Zealand . 550 parts In-Stock

1+ parts

$41.433

100+ parts

$38.118

1k+ parts

$35.718

10k+ parts

-

550

$41.433

$38.118

$35.718

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Microchip USA

USA . 3,499 parts In-Stock

1+ parts

$102.304

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3,499

$102.304

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 2,480 parts In-Stock

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2,480

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Overview

Unleash the power of innovation with the FP20R06W1E3BOMA1 by Infineon Technologies, a top-tier manufacturer known for delivering cutting-edge solutions in the field of Insulated Gate Bipolar Transistors. This N-CHANNEL transistor, with its complex configuration and 7 elements, is designed for precise power control applications. With a maximum collector-emitter voltage of 600V and a nominal turn-off time of 250ns, this product offers unparalleled performance and reliability. Elevate your projects to new heights with the FP20R06W1E3BOMA1 and experience the quality and value that only Infineon Technologies can provide.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs offer lower conduction losses compared to P-CHANNEL, making them more efficient for power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliable and efficient operation in high-power scenarios.

Maximum Collector-Emitter Voltage: 600 V

Suitable for high voltage applications, providing a wide operating range for power control needs.

Maximum Collector Current (IC): 27 A

With a high collector current rating, this IGBT can handle high power levels effectively, making it suitable for demanding applications.

Nominal Turn On Time (ton): 37 ns

Fast turn-on time enables quick switching speeds, allowing for efficient power control and performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FP20R06W1E3BOMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JESD-30 Code:

R-XUFM-X23

No. of Elements:

7

No. of Terminals:

23

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

250 ns

Nominal Turn On Time (ton):

37 ns

Trade Compliance

FP20R06W1E3BOMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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