Loading...

SGP13N60UFDTU

Onsemi

SGP13N60UFDTU by Onsemi

SGP13N60UFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 13A IC, and 253ns toff. Ideal for MOTOR CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temperature of 150 °C in a PLASTIC/EPOXY package style.

Median Price

$1.530

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 600 parts In-Stock

1+ parts

$0.850

100+ parts

$0.774

1k+ parts

$0.697

10k+ parts

-

600

$0.850

$0.774

$0.697

-

Rochester

USA . 9,677 parts In-Stock

1+ parts

-

100+ parts

$1.530

1k+ parts

$1.270

10k+ parts

$1.130

9,677

-

$1.530

$1.270

$1.130

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.587

10k+ parts

$1.413

9,000

-

-

$1.587

$1.413

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,924 parts In-Stock

1+ parts

$0.808

100+ parts

-

1k+ parts

-

10k+ parts

-

1,924

$0.808

-

-

-

Vyrian

USA . 1,109 parts In-Stock

1+ parts

$0.850

100+ parts

-

1k+ parts

-

10k+ parts

-

1,109

$0.850

-

-

-

DigiKey Marketplace

USA . 9,879 parts In-Stock

1+ parts

-

100+ parts

$1.310

1k+ parts

-

10k+ parts

-

9,879

-

$1.310

-

-

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 160 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

160

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,248 parts In-Stock

1+ parts

$0.765

100+ parts

-

1k+ parts

-

10k+ parts

-

1,248

$0.765

-

-

-

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.850

100+ parts

$0.774

1k+ parts

$0.697

10k+ parts

-

600

$0.850

$0.774

$0.697

-

Corohmni

South Africa . 177 parts In-Stock

1+ parts

$0.850

100+ parts

-

1k+ parts

-

10k+ parts

-

177

$0.850

-

-

-

Component Stockers USA

USA . 22,510 parts In-Stock

1+ parts

$1.270

100+ parts

$1.190

1k+ parts

$1.080

10k+ parts

-

22,510

$1.270

$1.190

$1.080

-

Continental Prestige Electronics

USA . 9,879 parts In-Stock

1+ parts

-

100+ parts

$1.510

1k+ parts

-

10k+ parts

-

9,879

-

$1.510

-

-

TANS Electronics

Latvia . 6,627 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,627

-

-

-

-

Problanco Electronics

Mexico . 6,538 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,538

-

-

-

-

A-Z Elektronik GmbH

Germany . 5,183 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,183

-

-

-

-

Microchip USA

USA . 3,202 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,202

-

-

-

-

Authorized Procurement Solutions

USA . 2,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,700

-

-

-

-

Supply Digital

USA . 2,336 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,336

-

-

-

-

SupplyDigital Components

Austria . 245 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

245

-

-

-

-

Kulean Microsystems

USA . 230 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

230

-

-

-

-

UHIMA Technologies

Türkiye . 220 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

220

-

-

-

-

Overview

Discover the power of the SGP13N60UFDTU by Onsemi, a high-quality Insulated Gate Bipolar Transistor that offers exceptional performance in motor control applications. With a maximum collector-emitter voltage of 600V and a nominal turn off time of 253ns, this N-channel transistor provides efficient operation and reliable results. Manufactured by Onsemi, a trusted name in semiconductor technology, this IGBT boasts a single configuration with a built-in diode for added convenience. Experience the value and benefits of this product, from its durable plastic/epoxy package body material to its matte tin terminal finish. Upgrade your motor control systems with the SGP13N60UFDTU and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

Offers efficient current flow and high switching speeds, making it suitable for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor package.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance and efficiency.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into circuit boards or systems.

Terminal Form: THROUGH-HOLE

Makes for secure and reliable connection to circuit boards, suitable for industrial applications.

Nominal Turn Off Time (toff): 253 ns

Fast turn off time allows for precise control and efficient operation of the transistor.

No. of Terminals: 3

Provides necessary connections for power, control, and grounding, ensuring proper functioning of the device.

Package Style (Meter): FLANGE MOUNT

Enables easy and secure mounting on a heat sink for effective heat dissipation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for applications where heat dissipation is critical.

Maximum Collector-Emitter Voltage: 600 V

Can handle high voltage applications, providing a high level of reliability and performance.

Transistor Element Material: SILICON

Silicon is a commonly used material known for its high efficiency and reliability in electronic components.

Maximum Collector Current (IC): 13 A

Capable of handling high current loads, making it suitable for motor control and power applications.

Terminal Finish: MATTE TIN

Provides a reliable and low-resistance connection, ensuring efficient power transmission.

Terminal Position: SINGLE

Simplifies installation and connection, reducing the chances of errors or malfunctions.

Nominal Turn On Time (ton): 62 ns

Fast turn on time ensures quick activation of the transistor, improving overall system responsiveness.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGP13N60UFDTU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

253 ns

Nominal Turn On Time (ton):

62 ns

Trade Compliance

SGP13N60UFDTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20