Loading...

FGPF10N60UNDF

Onsemi

FGPF10N60UNDF by Onsemi

FGPF10N60UNDF by Onsemi is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 20A max collector current, and 42W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast switching times of 15.4ns turn on and 24.8ns fall time.

Median Price

$1.335

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 4 parts In-Stock

1+ parts

$1.310

100+ parts

$1.076

1k+ parts

$1.014

10k+ parts

-

4

$1.310

$1.076

$1.014

-

Chip1Stop

Japan . 4 parts In-Stock

1+ parts

$1.360

100+ parts

-

1k+ parts

-

10k+ parts

-

4

$1.360

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,935 parts In-Stock

1+ parts

$0.757

100+ parts

-

1k+ parts

-

10k+ parts

-

1,935

$0.757

-

-

-

Nova Conductors

Japan . 800 parts In-Stock

1+ parts

$1.036

100+ parts

-

1k+ parts

-

10k+ parts

-

800

$1.036

-

-

-

Vyrian

USA . 4,854 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,854

-

-

-

-

Bristol Electronics

USA . 1,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,300

-

-

-

-

Dan-Mar Components

USA . 1,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,300

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

900

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4 parts In-Stock

1+ parts

$0.680

100+ parts

-

1k+ parts

-

10k+ parts

-

4

$0.680

-

-

-

Corphita

USA . 1,852 parts In-Stock

1+ parts

$0.717

100+ parts

-

1k+ parts

-

10k+ parts

-

1,852

$0.717

-

-

-

Corohmni

South Africa . 463 parts In-Stock

1+ parts

$0.797

100+ parts

-

1k+ parts

-

10k+ parts

-

463

$0.797

-

-

-

Continental Prestige Electronics

USA . 5,910 parts In-Stock

1+ parts

$1.036

100+ parts

-

1k+ parts

-

10k+ parts

$1.016

5,910

$1.036

-

-

$1.016

Argo Parts USA

USA . 2,655 parts In-Stock

1+ parts

$1.036

100+ parts

-

1k+ parts

-

10k+ parts

-

2,655

$1.036

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$1.036

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

$1.036

-

-

-

AZTECH Wire

Italy . 811 parts In-Stock

1+ parts

$5.173

100+ parts

-

1k+ parts

-

10k+ parts

-

811

$5.173

-

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,986

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 26,777 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26,777

-

-

-

-

TANS Electronics

Latvia . 6,325 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,325

-

-

-

-

A-Z Elektronik GmbH

Germany . 5,507 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,507

-

-

-

-

SupplyDigital Components

Austria . 5,339 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,339

-

-

-

-

Alle Elektronik GmbH

Germany . 3,671 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,671

-

-

-

-

Problanco Electronics

Mexico . 3,193 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,193

-

-

-

-

Supply Digital

USA . 2,473 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,473

-

-

-

-

Perfect Parts

USA . 1,823 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,823

-

-

-

-

Kulean Microsystems

USA . 1,221 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,221

-

-

-

-

UHIMA Technologies

Türkiye . 615 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

615

-

-

-

-

Kepictronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Unleash the power of your motor control applications with the FGPF10N60UNDF by Onsemi. As a leading manufacturer in the industry, Onsemi delivers unparalleled quality and reliability in their Insulated Gate Bipolar Transistors (IGBT). This N-CHANNEL transistor boasts a single configuration with a built-in diode, offering customers seamless integration and enhanced performance. With a maximum collector-emitter voltage of 600V and a maximum collector current of 20A, this transistor provides exceptional power dissipation capabilities. Trust Onsemi to elevate your projects with cutting-edge technology and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drop compared to P-channel, making them more efficient for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy implementation of reverse current protection, increasing reliability in motor control applications.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance and efficiency in controlling electric motors.

Terminal Form: THROUGH-HOLE

Allows for easy and secure mounting on a circuit board, facilitating the assembly process.

Maximum Fall Time (tf): 24.8 ns

Fast fall time allows for quick switching and improved efficiency in motor control applications.

Nominal Turn Off Time (toff): 89.3 ns

Quick turn-off time helps in reducing power dissipation and improving overall efficiency of the product.

Maximum Power Dissipation (Abs): 42 W

Higher power dissipation capability ensures the product can handle higher loads and operate reliably under demanding conditions.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for industrial applications where temperature fluctuations are common.

Maximum Collector-Emitter Voltage: 600 V

High voltage rating provides robustness and reliability in high voltage applications for motor control.

Maximum Gate-Emitter Voltage: 20 V

Suitable for driving gate signals with varying voltages, offering flexibility in motor control applications.

Maximum Collector Current (IC): 20 A

High collector current rating allows the product to handle larger current loads, making it suitable for high-power motor control applications.

Maximum Gate-Emitter Threshold Voltage: 8.5 V

Optimal gate-emitter threshold voltage ensures reliable turn-on and turn-off characteristics for precise motor control.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant finish for the terminals, ensuring long-term performance and connectivity.

Nominal Turn On Time (ton): 15.4 ns

Fast turn-on time allows for quick response and precise control of electric motors in motor control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGPF10N60UNDF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

24.8 ns

Maximum Gate-Emitter Threshold Voltage:

8.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

89.3 ns

Nominal Turn On Time (ton):

15.4 ns

Trade Compliance

FGPF10N60UNDF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 14