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FGPF4565

Onsemi

FGPF4565 by Onsemi

FGPF4565 by Onsemi is an N-CHANNEL IGBT with VCEsat of 1.88V, IC of 30A, and VGE(th) of 5V. It is used in power control applications due to its 650V VCEO, 30W Ptot, and fast turn-off time of 242.8ns. The package style is flange mount with a rectangular shape and through-hole terminals.

Median Price

$1.462

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

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$1.410

1k+ parts

$1.170

10k+ parts

$1.040

3,000

-

$1.410

$1.170

$1.040

Verical

USA . 3,000 parts In-Stock

1+ parts

-

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$1.462

10k+ parts

$1.300

3,000

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$1.462

$1.300

Flip Electronics (Authorized)

USA . 2,000 parts In-Stock

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DigiKey

USA . 891 parts In-Stock

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$1.760

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891

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$1.760

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Distributors (In-Stock)

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Vyrian

USA . 838 parts In-Stock

1+ parts

$0.883

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838

$0.883

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Digiode

USA . 1,521 parts In-Stock

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$1.092

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Flip Electronics

USA . 2,000 parts In-Stock

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DigiKey Marketplace

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Ampacity Inc.

Singapore . 1,426 parts In-Stock

1+ parts

$0.750

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1,426

$0.750

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Corohmni

South Africa . 110 parts In-Stock

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$0.883

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$0.883

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Corphita

USA . 1,949 parts In-Stock

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$1.035

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$1.035

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Microchip USA

USA . 8,263 parts In-Stock

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$7.215

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$7.215

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Native Components

USA . 316 parts In-Stock

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$16.879

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$16.879

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Northwest PG Solutions

USA . 1,948 parts In-Stock

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$18.567

100+ parts

$16.711

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$18.567

$16.711

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SupplyDigital Components

Austria . 7,257 parts In-Stock

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Problanco Electronics

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Authorized Procurement Solutions

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Kepictronics

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Assy Fe

Spain . 3,516 parts In-Stock

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

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$0.883

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Kulean Microsystems

USA . 2,634 parts In-Stock

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UHIMA Technologies

Türkiye . 767 parts In-Stock

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TANS Electronics

Latvia . 580 parts In-Stock

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Supply Digital

USA . 328 parts In-Stock

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Overview

Unlock the power of advanced technology with the FGPF4565 by Onsemi, a top-tier manufacturer of Insulated Gate Bipolar Transistors (IGBT). Perfect for power control applications, this N-CHANNEL transistor offers unparalleled performance and efficiency with its built-in diode and low VCEsat of 1.88V. With a maximum collector-emitter voltage of 650V and a maximum operating temperature of 150 °C, this transistor ensures reliable and stable operation even in the most demanding conditions. Trust Onsemi to deliver quality and reliability, and experience the difference with the FGPF4565.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and electrical insulation, ensuring the safety and reliability of the device.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have faster switching speeds and lower on-state losses compared to P-channel IGBTs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for simplified circuit design and protection against reverse current flow.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, making it ideal for high-power switching and motor control.

Maximum VCEsat: 1.88 V

Low VCEsat reduces power losses and improves efficiency in high-power applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, ideal for applications where reliability is crucial.

Nominal Turn Off Time (toff): 242.8 ns

Fast turn-off time ensures quick switching and reduces heat generation in the device.

Maximum Power Dissipation (Abs): 30 W

High power dissipation capability allows the device to handle heavy loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides easy and secure mounting in various electronic systems.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the device to operate reliably in harsh environments.

Maximum Collector-Emitter Voltage: 650 V

High maximum voltage rating makes the device suitable for high-voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in power switching applications.

Maximum Gate-Emitter Voltage: 25 V

Wide gate-emitter voltage range allows for versatile use in different circuit designs.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures the device can operate even in cold conditions.

Maximum Collector Current (IC): 30 A

High collector current rating allows the device to handle high current loads with efficiency.

Maximum Gate-Emitter Threshold Voltage: 5 V

Low gate-emitter threshold voltage ensures fast and efficient switching of the device.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and ensures easy connection in circuits.

Case Connection: ISOLATED

Isolated case connection improves safety and prevents electrical interference in the circuit.

Nominal Turn On Time (ton): 72 ns

Fast turn-on time allows for quick response and efficient switching in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGPF4565 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

25 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

242.8 ns

Nominal Turn On Time (ton):

72 ns

Maximum VCEsat:

1.88 V

Trade Compliance

FGPF4565 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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