Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FGPF4536 by Onsemi is an N-CHANNEL IGBT transistor with a VCEsat of 1.8V and max power dissipation of 28.4W. Ideal for POWER CONTROL applications, it has a max VCE of 360V, operating temp up to 150 °C, and turn-off time of 292ns.
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Provides insulation and protection for the components, making the product durable and reliable.
N-channel IGBTs typically offer lower conduction losses, making this product more efficient.
Simplifies circuit design and reduces complexity in the system.
Specifically designed for power control applications, ensuring optimal performance in such scenarios.
Low VCEsat helps in minimizing power dissipation and improving efficiency of the product.
Rectangular shape allows for efficient placement and mounting in various systems.
Fast turn off time enables quick switching and better control in power applications.
Simple three-terminal setup for ease of connection and integration within circuits.
High power dissipation capability makes it suitable for handling heavy loads and high power applications.
Flange mount design offers stability and ease of installation in various systems.
Wide operating temperature range allows for reliable performance in different environmental conditions.
High collector-emitter voltage rating provides flexibility in handling higher voltages.
Silicon-based material ensures high performance and reliability in power control applications.
Adequate gate-emitter voltage for proper control and switching of the transistor.
Wide temperature range allows for operation in extreme cold conditions.
Optimal gate-emitter threshold voltage for efficient switching and control.
Matte tin finish provides good electrical conductivity and corrosion resistance for the terminals.
Single terminal position simplifies installation and connection within circuits.
Isolated case connection improves safety and reduces the risk of electrical interference.
Fast turn on time ensures quick response and efficient power control in the system.
Insulated Gate Bipolar Transistors (IGBT) FGPF4536 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi
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Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
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Maximum Power Dissipation (Abs):
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FGPF4536 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
SMMBT2222ALT1G
Onsemi
SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
2N7002
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
LM7805CT
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
BSS138W-7-F
Multicomp Pro
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
2N2222A
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
BSS138
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
BSS138DW-7-F
Diodes Incorporated
BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;
LM317T/NOPB
Texas Instruments
LM317T/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount with three terminals for easy installation.
LL4148
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM317T
STMicroelectronics
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-XSFM-T3; Minimum Input-Output Voltage Differential: 3 V;
LM555CN
Harris Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
MBR1560CT
General Instrument
MBR1560CT by General Instrument is a common cathode rectifier diode with a max forward voltage of 0.75V and max output current of 15A. It is used for efficiency applications, has a package shape of rectangular, and can operate in temperatures ranging from -65 to 150 °C.
LM358M
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
NE555D
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
SMBJ18CA
Pulse Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSFM-T3; Adjustability: ADJUSTABLE; Package Equivalence Code: SIP3,.1TB;
LM358N
Taejin Technology
OPERATIONAL AMPLIFIER; Temperature Grade: AUTOMOTIVE; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
MBR0540T1G
MBR0540T1G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.62V and max. output current of 0.5A, ideal for applications requiring high efficiency power conversion in small outline packages. Operating temp range: -55 to 150°C, with peak reflow temp at 260°C, making it suitable for various electronic devices needing reliable rectification performance in compact designs.
Microsemi
IHW15N120E1XKSA1
Infineon Technologies
IHW15N120E1XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and a Max Collector Current of 30A. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 1450ns. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals, making it suitable for various power control systems.
FP30R06W1E3B11BOMA1
Infineon Technologies' FP30R06W1E3B11BOMA1 is an N-CHANNEL IGBT with 7 elements, 600V max collector-emitter voltage, and 37A max collector current. It has a complex configuration for power control applications, featuring a rectangular package style with flange mount and UL approval. Nominal turn off time is 245ns while turn on time is 42ns.
APT35GT120JU2
Microchip Technology
Microchip Technology's APT35GT120JU2 is an N-CHANNEL IGBT with 1200V VCEsat, 55A IC, and 260W power dissipation. Ideal for power control applications due to its fast turn-off time of 610ns and built-in diode configuration. Operates at up to 150°C temperature, making it suitable for high-power systems.
IKP40N65F5XKSA1
IKP40N65F5XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for power control applications due to its fast turn-off time (toff) of 200ns and high collector-emitter voltage rating of 650V. Package style is flange mount with through-hole terminals.
FP25R12W2T4B11BOMA1
FP25R12W2T4B11BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 39A max collector current. It has a complex configuration, 7 elements, and is used for power control applications. With a nominal turn-off time of 520ns and turn-on time of 47ns, it features a rectangular package style with flange mount.
HGTD1N120BNS9A
HGTD1N120BNS9A by Onsemi is an N-CHANNEL IGBT transistor for MOTOR CONTROL applications. It features a Max VCEsat of 2.9V, Max Collector-Emitter Voltage of 1200V, and Max Power Dissipation of 60W. With a compact SMALL OUTLINE package style, it operates b/w -55 to 150 °C and has fast switching times (tr: 15ns, tf: 370ns).
APT200GN60J
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 250 A; Nominal Turn Off Time (toff): 1210 ns; Transistor Element Material: SILICON;
IRGB4061DPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 206 W; Maximum Collector Current (IC): 36 A; Qualification: Not Qualified;
IXGH72N60A3
Littelfuse
IXGH72N60A3 by Littelfuse is an N-CHANNEL IGBT transistor with VCEsat of 1.35V, IC of 75A, and Ptot of 540W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 885ns and high operating temperature range (-55 to 150°C).
IRG4BC30WPBF
IRG4BC30WPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 600V and Max Power Dissipation of 100W. It has a Nominal Turn Off Time of 300ns, making it suitable for POWER CONTROL applications requiring fast switching speeds and high voltage handling capabilities.
CM600DX-24T
Mitsubishi Electric
The Mitsubishi Electric CM600DX-24T is a N-CHANNEL IGBT with 2 elements, built-in diode and thermistor. It has a max VCEsat of 2.05V and can handle up to 600A collector current. Ideal for power control applications, it operates b/w -40 to 150 °C with UL recognition.
IXGT30N120B3D1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 30 A; Package Body Material: PLASTIC/EPOXY;
AOTF15B65M2
Alpha & Omega Semiconductor
AOTF15B65M2 by Alpha & Omega Semiconductor is an N-CHANNEL IGBT with VCEsat of 2.15V, IC of 30A, and toff of 108ns. Ideal for power control applications due to its single configuration with built-in diode and max operating temperature of 150°C.
CM1000E3U-34NF
Powerex
Powerex CM1000E3U-34NF is an N-CHANNEL IGBT with 1700V VCE, 1000A IC, and 150°C max temp. Ideal for power control applications due to its single configuration with built-in diode and flange mount package style.
FF150R12RT4HOSA1
FF150R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a toff of 490 ns, and ton of 185 ns. It is used for POWER CONTROL applications, featuring a max Vce of 1200V and operating temperature of 175°C in a FLANGE MOUNT package.
ISL9V5036P3_F085
Fairchild Semiconductor's ISL9V5036P3_F085 is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 360V and Max Power Dissipation of 250W. It features a built-in diode and resistor, making it suitable for POWER CONTROL applications requiring fast switching times up to 7000ns rise time and 15000ns fall time.
IGW50N60TPXKSA1
IGW50N60TPXKSA1 by Infineon is an N-CHANNEL IGBT with a max voltage of 600V and max current of 100A. It has a turn-off time of 396ns and turn-on time of 60ns, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations at temperatures up to 175°C.
FGH40N60SFDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Case Connection: COLLECTOR;
BSM75GB120DN2
Eupec & Kg
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 75 A; JESD-30 Code: R-XUFM-X7;
MG400V1US51A
The Mitsubishi Electric MG400V1US51A is an N-CHANNEL IGBT transistor with a max VCEsat of 4.5V and IC of 400A. Ideal for power control applications, it has a toff of 770ns and ton of 210ns. With a max operating temperature of 150°C, this UL RECOGNIZED component offers high power dissipation at 2750W in a RECTANGULAR package style.
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FGPF10N60UNDF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 600 V;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Collector Current (IC): 20 A; Maximum Fall Time (tf): 24.8 ns;
FGPF15N60UNDF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Collector Current (IC): 30 A; Case Connection: ISOLATED;
FGPF4533
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28.4 W; Maximum Collector Current (IC): 50 A; Terminal Position: SINGLE;
FGPF4533TU
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; Qualification: Not Qualified;
FGPF4536TU
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Additional Features: LOW CONDUCTION LOSS; Maximum Operating Temperature: 150 Cel; Nominal Turn Off Time (toff): 292 ns;
FGPF4565
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 30 A; Maximum Gate-Emitter Threshold Voltage: 5 V;
FGPF4633
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: SINGLE; Nominal Turn Off Time (toff): 394 ns; Nominal Turn On Time (ton): 40 ns;
FGPF4633TU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; JEDEC-95 Code: TO-220AB; No. of Terminals: 3;
FGPF50N30TTU
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: MOTOR CONTROL; Qualification: Not Qualified; Terminal Form: THROUGH-HOLE;
FGPF50N33BT
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; JESD-30 Code: R-PSFM-T3; Transistor Application: POWER CONTROL;
FGPF50N33BTTU
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
FGPF70N33BTTU
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; Maximum Collector Current (IC): 70 A; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28.4 W; Maximum Collector Current (IC): 200 A; JESD-30 Code: R-PSFM-T3;
FGPF70N30TTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 49.2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
FGPF45N45TTU
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 51.6 W; Maximum Collector Current (IC): 45 A; Case Connection: ISOLATED;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28.4 W; Qualification: Not Qualified; No. of Elements: 1;
FGPF30N45TTU
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50.4 W; Maximum Collector Current (IC): 120 A; Transistor Element Material: SILICON;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30.5 W; JESD-609 Code: e3; Nominal Turn On Time (ton): 40 ns;
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