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FGPF4633TU

Onsemi

FGPF4633TU by Onsemi

FGPF4633TU by Onsemi is an N-CHANNEL IGBT with a max VCE of 330V and TOFF of 394ns. Ideal for power control applications, it features a single configuration with built-in diode and operates at up to 150 °C. This rectangular package transistor has through-hole terminals and a turn-on time (TON) of 40ns.

Median Price

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2

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1k+

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Vyrian

USA . 838 parts In-Stock

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Digiode

USA . 435 parts In-Stock

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Native Components

USA . 387 parts In-Stock

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$376.650

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$369.117

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$365.350

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$361.584

387

$376.650

$369.117

$365.350

$361.584

Northwest PG Solutions

USA . 1,401 parts In-Stock

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$414.315

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 20,958 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,300 parts In-Stock

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Problanco Electronics

Mexico . 4,774 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,200 parts In-Stock

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SupplyDigital Components

Austria . 2,276 parts In-Stock

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Kulean Microsystems

USA . 1,999 parts In-Stock

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Perfect Parts

USA . 1,698 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 886 parts In-Stock

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Corphita

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Corohmni

South Africa . 331 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 212 parts In-Stock

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Overview

Unleash the power of innovation with the FGPF4633TU by Onsemi. As a leader in the manufacturing of Insulated Gate Bipolar Transistors (IGBT), Onsemi delivers top-notch quality and reliability. This N-CHANNEL transistor, configured as a single with built-in diode, is ideal for power control applications. With a maximum collector-emitter voltage of 330 V and a nominal turn-off time of 394 ns, this transistor offers exceptional performance. Trust Onsemi to provide high-value solutions that meet your needs efficiently and effectively. Elevate your projects with the FGPF4633TU and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and mechanical strength, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

Enhances power control capabilities and efficiency in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode within the transistor, reducing the need for additional components.

Transistor Application: POWER CONTROL

Suitable for controlling power in various applications, offering high performance and efficiency.

Package Shape: RECTANGULAR

Facilitates easy installation and heat dissipation in electronic systems.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections with a PCB, ensuring stable operation of the device.

Nominal Turn Off Time (toff): 394 ns

Fast turn off time improves switching speed and efficiency of the device.

No. of Terminals: 3

Provides necessary connections for power control applications, enhancing versatility and usability.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and secure integration into electronic systems.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, ensuring reliable performance in challenging environments.

Maximum Collector-Emitter Voltage: 330 V

Supports high voltage applications, making it suitable for a wide range of power control tasks.

Transistor Element Material: SILICON

Offers high performance and reliability compared to other materials, ensuring longer lifespan and stable operation.

Terminal Finish: TIN

Provides excellent conductivity, ensuring efficient power transfer and performance.

Terminal Position: SINGLE

Simplifies installation and connection, reducing complexity in circuit design.

Case Connection: ISOLATED

Enhances safety by isolating the device from external interference or short circuits.

Nominal Turn On Time (ton): 40 ns

Fast turn on time improves response speed and efficiency of the device during power control operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGPF4633TU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

330 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

394 ns

Nominal Turn On Time (ton):

40 ns

Trade Compliance

FGPF4633TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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