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FGPF4536TU

Onsemi

FGPF4536TU by Onsemi

FGPF4536TU by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 360V. It has a nominal turn-off time of 292ns and a turn-on time of 25.6ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and can operate at temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 2,437 parts In-Stock

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Digiode

USA . 2,247 parts In-Stock

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Native Components

USA . 379 parts In-Stock

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$6.109

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SupplyDigital Components

Austria . 8,081 parts In-Stock

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Problanco Electronics

Mexico . 5,639 parts In-Stock

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Kulean Microsystems

USA . 3,155 parts In-Stock

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Corphita

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Supply Digital

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TANS Electronics

Latvia . 840 parts In-Stock

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Northwest PG Solutions

USA . 707 parts In-Stock

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Corohmni

South Africa . 291 parts In-Stock

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UHIMA Technologies

Türkiye . 138 parts In-Stock

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Overview

Upgrade your power control systems with the FGPF4536TU Insulated Gate Bipolar Transistor from Onsemi. Known for their high-quality components, Onsemi delivers cutting-edge technology that ensures reliable performance in a variety of applications. Whether you need to enhance efficiency, increase power output, or improve overall system reliability, this N-channel transistor offers unmatched value and benefits to customers seeking top-notch performance. Trust Onsemi for exceptional quality and innovation in power control solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliability and durability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control capability in electronic circuits, making it suitable for a wide range of applications.

Configuration: SINGLE

Simplifies the design and installation process, reducing the complexity of circuitry and enhancing overall system efficiency.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and accuracy in regulating power output.

Package Shape: RECTANGULAR

Enables easy integration into circuit boards and assemblies, facilitating installation and maintenance processes.

Terminal Form: THROUGH-HOLE

Facilitates secure and reliable connections to external components, enhancing stability and performance in demanding operating environments.

Nominal Turn Off Time (toff): 292 ns

Provides fast switching characteristics, allowing for efficient control of power flow and minimizing energy losses in electronic systems.

No. of Terminals: 3

Offers versatile connectivity options and compatibility with a variety of circuit configurations, increasing flexibility in system design.

Package Style (Meter): FLANGE MOUNT

Facilitates easy mounting and secure attachment to heat sinks or other components, enhancing thermal management and overall system performance.

Maximum Operating Temperature: 150 °C

Ensures reliable operation in high-temperature environments, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 360 V

Provides high voltage tolerance, allowing for safe and efficient power handling in electric circuits and systems.

Transistor Element Material: SILICON

Delivers superior performance and reliability, ensuring consistent operation and longevity in demanding applications.

Terminal Position: SINGLE

Simplifies installation and wiring processes, reducing the risk of errors and improving overall system efficiency.

Case Connection: ISOLATED

Prevents electrical interference and reduces the risk of short circuits, enhancing safety and reliability in electronic systems.

Nominal Turn On Time (ton): 25.6 ns

Offers fast switching speed and precise control, improving the efficiency and responsiveness of power control operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGPF4536TU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

360 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

292 ns

Nominal Turn On Time (ton):

25.6 ns

Trade Compliance

FGPF4536TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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