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FGPF50N33BT

Onsemi

FGPF50N33BT by Onsemi

FGPF50N33BT by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 330V. It has a nominal turn-off time of 365ns and a turn-on time of 46ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and can operate at temperatures up to 150 °C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Magnum Semiconductors LLP

India . 104,500 parts In-Stock

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Vyrian

USA . 2,177 parts In-Stock

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Digiode

USA . 1,443 parts In-Stock

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Native Components

USA . 512 parts In-Stock

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$13.325

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Northwest PG Solutions

USA . 475 parts In-Stock

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$14.657

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$13.192

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475

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A-Z Elektronik GmbH

Germany . 6,317 parts In-Stock

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Kulean Microsystems

USA . 5,526 parts In-Stock

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TANS Electronics

Latvia . 5,504 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,211 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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SupplyDigital Components

Austria . 2,437 parts In-Stock

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Corphita

USA . 1,059 parts In-Stock

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Supply Digital

USA . 566 parts In-Stock

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Corohmni

South Africa . 491 parts In-Stock

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UHIMA Technologies

Türkiye . 301 parts In-Stock

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Problanco Electronics

Mexico . 153 parts In-Stock

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Overview

Enhance your power control applications with the FGPF50N33BT by Onsemi. As a leading manufacturer in insulated gate bipolar transistors (IGBT), Onsemi delivers top-notch quality and reliability. This N-channel single configuration transistor offers a fast turn-on time of 46 ns and a nominal turn-off time of 365 ns, making it ideal for high-power applications. With a maximum operating temperature of 150 °C and a collector-emitter voltage of 330V, this product provides exceptional value, efficiency, and performance for your electronic projects. Choose Onsemi for unmatched quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the internal components, increasing durability and reliability of the IGBT.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state resistance and faster switching speeds, improving efficiency and performance.

Configuration: SINGLE

Simplifies circuit design and installation, making it easier to integrate into applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and efficiency in controlling electrical power.

Package Shape: RECTANGULAR

Provides a compact and space-saving design, allowing for easy mounting and integration.

Nominal Turn Off Time (toff): 365 ns

Fast turn-off time helps in reducing power losses and improving efficiency during switching operations.

No. of Terminals: 3

Simple and easy connection setup with only 3 terminals required for operation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the IGBT to withstand high temperature environments, improving reliability and durability.

Maximum Collector-Emitter Voltage: 330 V

Allows for higher voltage applications, providing flexibility in a variety of power control scenarios.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, making them a preferred choice for power control applications.

Terminal Position: SINGLE

Simplified terminal layout makes installation and connection easier, reducing the chances of errors during setup.

Case Connection: ISOLATED

Isolated case connection enhances safety and minimizes the risk of electrical hazards in the system.

Nominal Turn On Time (ton): 46 ns

Fast turn-on time ensures quick response in power control operations, enhancing the overall efficiency of the system.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGPF50N33BT attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

330 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

365 ns

Nominal Turn On Time (ton):

46 ns

Trade Compliance

FGPF50N33BT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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