Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Infineon Technologies' FP10R06W1E3BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 600V, and max. current of 16A. Ideal for power control applications due to its fast turn on/off times (ton: 26ns, toff: 260ns) and operating temp up to 175°C in a rectangular package style.
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$0.595
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$1.675
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$1.720
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AZTECH Wire
$4.480
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Ampacity Inc.
$19.420
Semicontronic
$18.934
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Corphita
$20.565
Continental Prestige Electronics
$25.880
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Component Stockers USA
$27.520
Netroflash
$30.439
Microchip USA
$97.865
Argo Parts USA
Perfect Parts
This IGBT is designed with N-channel technology, offering high efficiency and performance in power control applications.
The complex configuration of this IGBT allows for versatile use in a variety of power control scenarios, making it a flexible choice for different systems.
Specifically designed for power control applications, this IGBT delivers reliable and efficient performance in managing electrical power.
The rectangular package shape of this IGBT provides easy integration into existing systems and helps optimize space utilization.
With 7 elements, this IGBT offers enhanced power handling capabilities, making it suitable for high-power applications.
The fast turn off time of 260 ns ensures quick and efficient switching, contributing to improved system performance and reliability.
The 23 terminals of this IGBT allow for versatile connectivity options, enhancing its compatibility with different circuit configurations.
The flange mount package style of this IGBT simplifies installation and provides secure mounting, ensuring reliability in operation.
With a maximum operating temperature of 175°C, this IGBT can withstand high heat conditions, making it suitable for demanding environments.
The high collector-emitter voltage rating of 600 V ensures safe and reliable operation in high-voltage applications.
Constructed with silicon material, this IGBT offers excellent performance and durability in power control applications.
With a maximum collector current of 16 A, this IGBT is capable of handling high levels of current, making it suitable for power-intensive tasks.
The upper terminal position of this IGBT allows for easy and convenient connection, simplifying installation and maintenance processes.
The isolated case connection of this IGBT enhances safety by preventing electrical interference and improving system reliability.
The fast turn on time of 26 ns ensures quick activation and response, enhancing the efficiency and performance of power control operations.
Insulated Gate Bipolar Transistors (IGBT) FP10R06W1E3BOMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Case Connection:
Maximum Collector Current (IC):
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JESD-30 Code:
No. of Elements:
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Package Body Material:
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FP10R06W1E3BOMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
USB2514BI-AEZG
Standard Microsystems
BUS CONTROLLER, UNIVERSAL SERIAL BUS; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 36; Package Code: HVQCCN; Package Shape: SQUARE;
BAV99
Secos
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Silicon Standard
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SMBJ18CA
Microsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
KSZ9031RNXIA
Micrel
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
M39029/56351
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/56351 is a CRIMP contact type backshell accessory compliant with MIL-DTL-38999. It features FEMALE gender contacts, compatible with M39029/58363 mating contacts. The insertion and removal tools required are M81969/14-10 and M22520/2-10 respectively, making it ideal for military connector applications.
1N4148
Microchip Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
EPCS4SI8N
Intel
EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.
1N4148W-7-F
Diodes Incorporated
1N4148W-7-F by Diodes Inc. is a single rectifier diode with 0.715V max forward voltage and 100V max reverse voltage. Ideal for applications requiring fast switching speeds, it has a small outline package style and matte tin terminal finish, making it suitable for surface mount PCB designs.
1N4148WS
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
Hy Electronic
ULN2803A
Sanken Electric
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;
LM358MX
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
MBR130T1G
Onsemi
MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.
OHN3140U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
STM32H753IIK6
STMicroelectronics
STM32H753IIK6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and peripherals like CAN, ETHERNET, and USB. Ideal for industrial applications requiring high-speed processing and extensive connectivity options.
NDT2955
NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.
SS14
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
IXGH6N170
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 12 A; Maximum Gate-Emitter Voltage: 20 V;
2MBI150NC-120
Collmer Semiconductor
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Collector Current (IC): 150 A; JESD-30 Code: R-XUFM-X7; Package Style (Meter): FLANGE MOUNT;
HGT1S10N120BNS
Intersil
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 198 W; Maximum Collector Current (IC): 35 A; Package Shape: RECTANGULAR;
RGTVX6TS65DGC11
ROHM RGTVX6TS65DGC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage, ideal for power control applications. Featuring a single configuration with built-in diode, it has a 144A max collector current and 298ns nominal turn off time. This IGBT operates b/w -40°C to 175°C temperature range.
FF600R12ME4B11BPSA1
Infineon Technologies
Infineon Technologies' FF600R12ME4B11BPSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and current of 995A, ideal for power control applications. Featuring a turn off time of 770ns and turn on time of 310ns, it is UL RECOGNIZED and comes in a FLANGE MOUNT package style.
IXBK55N300
Littelfuse
IXBK55N300 by Littelfuse is an N-CHANNEL IGBT with 3.2V VCEsat, 130A IC, and 625W power dissipation. Ideal for POWER CONTROL applications, it features a 3000V VCE max and -55 to 150°C operating temp range in a RECTANGULAR package with THROUGH-HOLE terminals.
APT200GN60JDQ4
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 283 A; Nominal Turn Off Time (toff): 660 ns; JESD-30 Code: R-PUFM-X4;
IGD06N60TATMA1
Infineon's IGD06N60TATMA1 is an N-CHANNEL IGBT with 600V VCE, 6A IC, and 17ns ton. It is a surface-mount device in a plastic package suitable for high-speed switching applications.
APT100GN60B2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 229 A; Case Connection: COLLECTOR;
STGE200NB60S
STGE200NB60S by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 200A IC, and 1.6V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 600W and operates up to 150°C.
FGA25N120ANTDTU-F109
FGA25N120ANTDTU-F109 by Onsemi is an N-CHANNEL IGBT with 90 ns rise time, 180 ns fall time, and 312 W power dissipation. Ideal for high-power applications requiring a max collector-emitter voltage of 1200 V and a collector current of 50 A. Operating temperature up to 150°C makes it suitable for industrial use.
IGP15N60TXKSA1
Infineon's IGP15N60TXKSA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 30A max collector current. It has a turn-off time of 291ns and turn-on time of 32ns, making it ideal for power control applications. The transistor comes in a plastic/epoxy package with through-hole terminals and can operate at temperatures up to 175°C.
IGW50N60TPXKSA1
IGW50N60TPXKSA1 by Infineon is an N-CHANNEL IGBT with a max voltage of 600V and max current of 100A. It has a turn-off time of 396ns and turn-on time of 60ns, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations at temperatures up to 175°C.
F3L75R12W1H3B27BOMA1
Infineon's F3L75R12W1H3B27BOMA1 IGBT features 1200V max collector-emitter voltage, 45A max collector current, and 385ns nominal turn-off time. Ideal for applications requiring high power switching such as motor drives and renewable energy systems.
F4150R12KS4BOSA1
F4150R12KS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and can handle a collector current of 180A, making it ideal for power control applications. With a turn-off time of 390ns and turn-on time of 190ns, this UL RECOGNIZED transistor is designed for high-power operations.
FGL60N100BNTDTU
FGL60N100BNTDTU by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1000V and a Max Collector Current of 60A. It has a Nominal Turn Off Time of 760ns and Nominal Turn On Time of 460ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material and THROUGH-HOLE terminals.
SKM400GB12E4
Semikron International
SKM400GB12E4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.05V and can handle a Max Collector Current of 618A. Ideal for POWER CONTROL applications due to its fast Nominal Turn Off Time of 681ns and high Max Collector-Emitter Voltage of 1200V.
STGWT40HP65FB
STGWT40HP65FB by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 80A, and Pmax of 283W. Ideal for power control applications, it has a toff of 202ns and ton of 169ns. Suitable for high-power systems operating b/w -55°C to 175°C.
HGTG30N60C3D
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Transistor Element Material: SILICON;
FS50R06W1E3BOMA1
Infineon's FS50R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 70A, and turn off time of 370ns. Ideal for power control applications, it operates at up to 175°C with a max. collector-emitter voltage of 600V in a rectangular package style.
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FP100R12KT4B11BOSA1
Infineon's FP100R12KT4B11BOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 620ns turn-off time, and 210ns turn-on time. Its complex configuration and isolated case connection make it ideal for high-power applications in industries like automotive and renewable energy.
FP100R06KE3BOSA1
FP100R06KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V. It has a nominal turn-off time of 820ns and a nominal turn-on time of 170ns. This IGBT is commonly used in applications requiring high power switching, such as motor drives and power supplies.
FP10R12W1T4B3BOMA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Terminal Form: UNSPECIFIED; Maximum Collector-Emitter Voltage: 1200 V;
FP100R06KE3
Eupec & Kg
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn Off Time (toff): 820 ns; Nominal Turn On Time (ton): 170 ns; Package Shape: RECTANGULAR;
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 335 W; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V;
FP10R12W1T4B11BOMA1
Infineon's FP10R12W1T4B11BOMA1 IGBT features 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn-off time. Ideal for power control applications due to N-channel polarity, complex configuration, and silicon transistor element material.
FP10R12W1T4BOMA1
Infineon Technologies' FP10R12W1T4BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 20A. Ideal for POWER CONTROL applications due to its fast turn-off time of 500ns and turn-on time of 108ns. Package style is FLANGE MOUNT with RECTANGULAR shape and UPPER terminal position.
FP10R12W1T4PB11BPSA1
Infineon's FP10R12W1T4PB11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.
FP10R12W1T4PBPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Terminal Form: UNSPECIFIED; Package Style (Meter): FLANGE MOUNT;
FP100R12N3T7_B11
Insulated Gate Bipolar Transistors;
FP100R12N3T7
FP100R12KT4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED;
FP100R07N3E4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Elements: 7; JESD-30 Code: R-XUFM-X43; Package Shape: RECTANGULAR;
FP100R12W3T7_B11
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Transistor Element Material: SILICON; JESD-30 Code: R-XUFM-X31;
FP100R12KT4_B11
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 100 A; Package Shape: RECTANGULAR;
FP10R06KL4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Maximum Collector Current (IC): 16 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FP10R06KL4_B3
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 69.5 W; Maximum Collector Current (IC): 16 A; Peak Reflow Temperature (C): NOT SPECIFIED;
FP100R07N3E4_B11
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Terminals: 43; Case Connection: ISOLATED; Transistor Element Material: SILICON;
FP100R12KT4BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Terminal Form: UNSPECIFIED; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified;
FP10R06W1E3
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Terminal Position: UPPER; Qualification: Not Qualified;
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