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FGPF15N60UNDF

Onsemi

FGPF15N60UNDF by Onsemi

FGPF15N60UNDF by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 30A. It has a nominal turn-off time of 69.8ns, making it ideal for motor control applications requiring fast switching speeds. The package style is flange mount with a max power dissipation of 42W at an operating temperature of up to 150°C.

Median Price

$1.420

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 1,000 parts In-Stock

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$1.420

100+ parts

$1.330

1k+ parts

$1.210

10k+ parts

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1,000

$1.420

$1.330

$1.210

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Distributors (In-Stock)

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Digiode

USA . 2,185 parts In-Stock

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$1.349

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$1.349

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Martec Srl

Italy . 84,360 parts In-Stock

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Vyrian

USA . 3,292 parts In-Stock

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Flip Electronics

USA . 1,000 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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900

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,706 parts In-Stock

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$1.051

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2,706

$1.051

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Ampacity Inc.

Singapore . 727 parts In-Stock

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$1.210

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727

$1.210

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Corphita

USA . 599 parts In-Stock

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$1.278

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599

$1.278

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Corohmni

South Africa . 322 parts In-Stock

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$1.608

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322

$1.608

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$1.694

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$1.542

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$1.389

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$1.694

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$1.389

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Perfect Parts

USA . 56,918 parts In-Stock

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Kepictronics

USA . 30,000 parts In-Stock

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Lixinc

USA . 12,018 parts In-Stock

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SupplyDigital Components

Austria . 7,731 parts In-Stock

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Problanco Electronics

Mexico . 7,229 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,922 parts In-Stock

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TANS Electronics

Latvia . 5,496 parts In-Stock

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Kulean Microsystems

USA . 4,545 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,948 parts In-Stock

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Supply Digital

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Argo Parts USA

USA . 1,914 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 620 parts In-Stock

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Continental Prestige Electronics

USA . 531 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 100 parts In-Stock

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Overview

Discover the FGPF15N60UNDF by Onsemi, a high-quality Insulated Gate Bipolar Transistor designed for motor control applications. With a single configuration and built-in diode, this transistor offers exceptional performance and reliability. Manufactured by Onsemi, a leader in semiconductor technology, this product guarantees top-notch quality and innovation. Experience seamless operation and maximum power dissipation of 42W with the FGPF15N60UNDF. Upgrade your motor control systems with this versatile component and unlock new possibilities in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good mechanical strength and durability, making the product suitable for rugged applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state resistance and higher switching speed, making them efficient for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for easy and efficient current flow in the circuit, reducing power losses and increasing overall efficiency.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring reliable and efficient performance in controlling motors.

Maximum Power Dissipation (Abs): 42 W

High power dissipation capability allows for handling high power levels without overheating, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 600 V

High collector-emitter voltage rating allows for reliable operation in high voltage applications, ensuring durability and safety.

Maximum Collector Current (IC): 30 A

High collector current rating allows for handling high levels of current, making the product suitable for power applications.

Maximum Operating Temperature: 150 °C

High operating temperature rating ensures reliable operation even in high temperature environments, providing durability and longevity.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGPF15N60UNDF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

12.8 ns

Maximum Gate-Emitter Threshold Voltage:

8.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

69.8 ns

Nominal Turn On Time (ton):

18.8 ns

Trade Compliance

FGPF15N60UNDF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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