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IXYN82N120C3H1

IXYS Corporation

IXYN82N120C3H1 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 105 A; Terminal Form: UNSPECIFIED;

Median Price

$35.260

Lifecycle Status

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8

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DigiKey

USA . 234 parts In-Stock

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$32.780

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$21.114

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Mouser Electronics

USA . 392 parts In-Stock

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$35.260

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$25.480

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392

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Verical

USA . 8 parts In-Stock

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$48.550

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$38.640

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$38.240

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8

$48.550

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Distrelec

Netherlands . 6 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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$43.990

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$43.990

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NAC Semi

USA . 1,417 parts In-Stock

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$67.350

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$61.230

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IBS Electronics

USA . 300 parts In-Stock

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$44.670

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$44.249

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Vyrian

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Aztec Data Supply Inc.

USA . 153 parts In-Stock

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$0.947

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AZTECH Wire

Italy . 711 parts In-Stock

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$4.979

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$4.979

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Ampacity Inc.

Singapore . 14 parts In-Stock

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$30.980

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Corohmni

South Africa . 123 parts In-Stock

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$36.185

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$37.271

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$35.407

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$35.407

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Netroflash

USA . 500 parts In-Stock

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$43.990

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$43.990

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Component Stockers USA

USA . 3,873 parts In-Stock

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$47.570

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$45.060

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$45.060

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3,873

$47.570

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$45.060

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Semicontronic

India . 6 parts In-Stock

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$67.430

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$65.744

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$65.407

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QUARKTWIN TECHNOLOGY LTD

USA . 14,199 parts In-Stock

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Microchip USA

USA . 8,053 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Argo Parts USA

USA . 1,873 parts In-Stock

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Perfect Parts

USA . 1,684 parts In-Stock

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1,684

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GreenTree Electronics

Israel . 256 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYN82N120C3H1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

295 ns

Nominal Turn On Time (ton):

119 ns

Trade Compliance

IXYN82N120C3H1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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