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STGB3NC120HDT4

STMicroelectronics

STGB3NC120HDT4 by STMicroelectronics

STGB3NC120HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 14A IC, and 680ns toff. Ideal for power control applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount assembly.

Median Price

$1.850

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,433 parts In-Stock

1+ parts

$1.850

100+ parts

$1.110

1k+ parts

$0.883

10k+ parts

-

1,433

$1.850

$1.110

$0.883

-

Mouser Electronics

USA . 1,309 parts In-Stock

1+ parts

$2.280

100+ parts

$0.996

1k+ parts

$0.746

10k+ parts

$0.720

1,309

$2.280

$0.996

$0.746

$0.720

DigiKey

USA . 659 parts In-Stock

1+ parts

$2.280

100+ parts

$0.996

1k+ parts

$0.731

10k+ parts

$0.630

659

$2.280

$0.996

$0.731

$0.630

Newark

USA . 945 parts In-Stock

1+ parts

$2.620

100+ parts

$1.340

1k+ parts

$1.140

10k+ parts

-

945

$2.620

$1.340

$1.140

-

Avnet

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Arrow

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.625

10k+ parts

-

4,000

-

-

$0.625

-

Verical

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.625

10k+ parts

-

4,000

-

-

$0.625

-

Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.058

10k+ parts

-

3,000

-

-

$1.058

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$1.240

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$1.240

-

-

-

Digiode

USA . 2,855 parts In-Stock

1+ parts

$1.758

100+ parts

-

1k+ parts

-

10k+ parts

-

2,855

$1.758

-

-

-

IBS Electronics

USA . 22,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.975

10k+ parts

$0.961

22,000

-

-

$0.975

$0.961

Vyrian

USA . 13,222 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,222

-

-

-

-

Chip Stock

USA . 11,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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11,500

-

-

-

-

Sensible Micro Corp

USA . 154 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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154

-

-

-

-

Anansix

USA . 147 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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147

-

-

-

-

Cyclops Electronics Ltd

UK . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 12,912 parts In-Stock

1+ parts

$0.580

100+ parts

-

1k+ parts

-

10k+ parts

-

12,912

$0.580

-

-

-

Semicontronic

India . 12,839 parts In-Stock

1+ parts

$0.580

100+ parts

$0.566

1k+ parts

$0.563

10k+ parts

-

12,839

$0.580

$0.566

$0.563

-

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$1.215

100+ parts

-

1k+ parts

$1.167

10k+ parts

-

2,000

$1.215

-

$1.167

-

Continental Prestige Electronics

USA . 4,659 parts In-Stock

1+ parts

$1.240

100+ parts

-

1k+ parts

-

10k+ parts

$1.215

4,659

$1.240

-

-

$1.215

Argo Parts USA

USA . 38 parts In-Stock

1+ parts

$1.240

100+ parts

-

1k+ parts

-

10k+ parts

-

38

$1.240

-

-

-

Corohmni

South Africa . 39 parts In-Stock

1+ parts

$1.269

100+ parts

-

1k+ parts

-

10k+ parts

-

39

$1.269

-

-

-

IDEA Electronic Components Group

UK . 1,911 parts In-Stock

1+ parts

$1.644

100+ parts

-

1k+ parts

$1.480

10k+ parts

-

1,911

$1.644

-

$1.480

-

Corphita

USA . 916 parts In-Stock

1+ parts

$1.665

100+ parts

-

1k+ parts

-

10k+ parts

-

916

$1.665

-

-

-

Aztec Data Supply Inc.

USA . 3,302 parts In-Stock

1+ parts

$1.930

100+ parts

-

1k+ parts

-

10k+ parts

-

3,302

$1.930

-

-

-

MKK Technologies

India . 1,221 parts In-Stock

1+ parts

$3.092

100+ parts

-

1k+ parts

-

10k+ parts

-

1,221

$3.092

-

-

-

DigiPath Technology Company

USA . 1,221 parts In-Stock

1+ parts

$3.092

100+ parts

-

1k+ parts

-

10k+ parts

-

1,221

$3.092

-

-

-

Microchip USA

USA . 9,055 parts In-Stock

1+ parts

$7.580

100+ parts

-

1k+ parts

-

10k+ parts

-

9,055

$7.580

-

-

-

GreenTree Electronics

Israel . 25,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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25,000

-

-

-

-

iodParts Technologies Inc.

India . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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24,000

-

-

-

-

Lixinc

USA . 15,595 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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15,595

-

-

-

-

Perfect Parts

USA . 13,625 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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13,625

-

-

-

-

Parana Technologies

USA . 560 parts In-Stock

1+ parts

-

100+ parts

$1.966

1k+ parts

-

10k+ parts

-

560

-

$1.966

-

-

Overview

Discover the groundbreaking STGB3NC120HDT4 by STMicroelectronics, a top-tier Insulated Gate Bipolar Transistor that guarantees unparalleled quality and reliability. Designed for power control applications, this N-channel transistor with a built-in diode offers exceptional performance and efficiency. With a maximum collector-emitter voltage of 1200V and a nominal turn-off time of 680ns, this transistor is a game-changer in the industry. Trust in STMicroelectronics' expertise and elevate your projects to new heights with the STGB3NC120HDT4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that provides protection for the internal components.

Polarity or Channel Type: N-CHANNEL

Efficient channel type for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient configuration with a built-in diode for improved functionality.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance.

Surface Mount: YES

Easy to mount on circuit boards, saving time and effort during assembly.

Package Shape: RECTANGULAR

Compact shape that fits well in various electronic devices and systems.

Nominal Turn Off Time (toff): 680 ns

Quick turn off time for efficient power control operations.

Maximum Collector-Emitter Voltage: 1200 V

High voltage capability for versatile application possibilities.

Transistor Element Material: SILICON

Reliable and widely used material for transistor elements.

Maximum Collector Current (IC): 14 A

Ideal current rating for power control applications.

Terminal Finish: Matte Tin (Sn) - annealed

Durable terminal finish that enhances product longevity.

Terminal Position: SINGLE

Simplified terminal configuration for easy integration.

Case Connection: COLLECTOR

Efficient connection point for the collector terminal.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands peak reflow temperatures for reliable soldering.

Peak Reflow Temperature °C: 245

High peak reflow temperature capability for robust soldering operations.

Nominal Turn On Time (ton): 18.5 ns

Quick turn on time for efficient power control operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB3NC120HDT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

680 ns

Nominal Turn On Time (ton):

18.5 ns

Trade Compliance

STGB3NC120HDT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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