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STGB12NB60KDT4

STMicroelectronics

STGB12NB60KDT4 by STMicroelectronics

STGB12NB60KDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 125W, and fast switching times (toff: 461ns, ton: 39.5ns). Its compact design ensures efficient performance in surface mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,446 parts In-Stock

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Vyrian

USA . 2,133 parts In-Stock

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Anansix

USA . 1,381 parts In-Stock

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IDEA Electronic Components Group

UK . 153 parts In-Stock

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$1.089

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-

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$0.980

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153

$1.089

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$0.980

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MKK Technologies

India . 2,109 parts In-Stock

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$2.048

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$2.048

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DigiPath Technology Company

USA . 2,109 parts In-Stock

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$2.048

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$2.048

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AZTECH Wire

Italy . 1,013 parts In-Stock

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$13.990

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$13.990

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Component Stockers USA

USA . 338 parts In-Stock

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$99.990

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A-Z Elektronik GmbH

Germany . 5,949 parts In-Stock

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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Corphita

USA . 2,251 parts In-Stock

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Parana Technologies

USA . 997 parts In-Stock

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$1.302

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997

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Kepictronics

USA . 187 parts In-Stock

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Overview

Unlock the potential of your projects with the STGB12NB60KDT4, a premium Insulated Gate Bipolar Transistor from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers exceptional performance and reliability in motor control applications. This robust, surface-mount IGBT combines efficiency with compact design, ensuring seamless operation even in demanding environments. Elevate your designs and experience unparalleled power management with ST's engineering excellence at your fingertips!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and provides reliable insulation, making this IGBT suitable for varied environmental conditions.

Polarity or Channel Type: N-CHANNEL

N-channel design typically offers better efficiency and faster switching speeds, which are critical for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and improves reliability, especially in applications involving motor control and switching.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control, ensuring optimal performance and efficiency in driving electric motors.

Surface Mount: YES

Surface mount technology allows for compact design and efficient manufacturing processes, making integration into circuits easier.

Package Shape: RECTANGULAR

Rectangular packaging is designed to optimize space on printed circuit boards, facilitating effective use of available area.

Terminal Form: GULL WING

Gull wing terminals enhance soldering quality and make assembly straightforward, increasing reliability in connections.

Nominal Turn Off Time (toff): 461 ns

A fast turn-off time improves the efficiency of high-frequency applications, reducing power loss and heat generation.

No. of Terminals: 2

A simple two-terminal design allows for easier integration into circuits and reduces complexity.

Maximum Power Dissipation (Abs): 125 W

High power dissipation capability enables effective handling of power in demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline packaging is advantageous for space-constrained applications and contributes to a compact overall system design.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature enhances reliability and performance in extreme conditions, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 600 V

Ability to handle voltages up to 600 V makes it a versatile choice for a variety of high-voltage applications.

Transistor Element Material: SILICON

Silicon is a well-established material for transistors, known for its excellent electrical properties and reliability.

Maximum Gate-Emitter Voltage: 20 V

A maximum gate-emitter voltage of 20 V provides design flexibility and ease of control in driving circuits.

Maximum Collector Current (IC): 30 A

Capable of handling a maximum collector current of 30 A, making it suitable for high-current applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

A low threshold voltage ensures efficient triggering and helps in reducing power losses during operation.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, ensuring longevity of the electrical connections.

Terminal Position: SINGLE

A single terminal position simplifies circuit design, allowing for straightforward circuit connections and layouts.

Nominal Turn On Time (ton): 39.5 ns

A short turn-on time of 39.5 ns allows for rapid switching, improving efficiency in high-speed applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB12NB60KDT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

461 ns

Nominal Turn On Time (ton):

39.5 ns

Trade Compliance

STGB12NB60KDT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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