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STGB10NB40LZT4

STMicroelectronics

STGB10NB40LZT4 by STMicroelectronics

STGB10NB40LZT4 from STMicroelectronics is an N-channel IGBT ideal for automotive ignition applications. It features a max collector-emitter voltage of 380V, power dissipation of 150W, and operates at up to 175 °C. Its compact design ensures efficient performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 12,526 parts In-Stock

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12,526

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Digiode

USA . 2,838 parts In-Stock

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2,838

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Anansix

USA . 1,747 parts In-Stock

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1,747

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Bristol Electronics

USA . 235 parts In-Stock

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Atlantic Semiconductor

USA . 235 parts In-Stock

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235

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,914 parts In-Stock

1+ parts

$0.751

100+ parts

-

1k+ parts

$0.676

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1,914

$0.751

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$0.676

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MKK Technologies

India . 1,682 parts In-Stock

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$1.412

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1,682

$1.412

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DigiPath Technology Company

USA . 1,682 parts In-Stock

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$1.412

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1,682

$1.412

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Microchip USA

USA . 304 parts In-Stock

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$9.241

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304

$9.241

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AZTECH Wire

Italy . 261 parts In-Stock

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$22.200

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261

$22.200

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Ampacity Inc.

Singapore . 283 parts In-Stock

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$51.050

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283

$51.050

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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iodParts Technologies Inc.

India . 7,000 parts In-Stock

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Perfect Parts

USA . 6,686 parts In-Stock

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Corphita

USA . 4,743 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,778 parts In-Stock

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2,778

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Parana Technologies

USA . 763 parts In-Stock

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$0.898

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763

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$0.898

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Overview

Unlock the power of efficiency with the STGB10NB40LZT4 from STMicroelectronics, a leader in semiconductor innovation. This N-channel IGBT delivers robust performance for automotive ignition systems, ensuring reliable operation even under extreme conditions. Its compact design enhances space savings, while built-in safety features minimize risks. With STMicroelectronics' commitment to quality, you can trust that this component will elevate your projects, offering unparalleled value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides excellent insulation and durability, making the IGBT suitable for various automotive applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer higher efficiency and faster switching speeds, beneficial for automotive ignition systems.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor streamline design and reduce component count while enhancing reliability.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition, ensuring reliable performance under the demanding conditions of vehicle operation.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient PCB layout and design, optimizing space within automotive applications.

Terminal Form: GULL WING

Gull wing terminals provide easy soldering and enhance mechanical stability during operation.

Nominal Turn Off Time (toff): 12000 ns

A relatively long turn-off time allows for effective control in high-power applications, making it suitable for automotive ignition demands.

No. of Terminals: 2

A two-terminal configuration simplifies integration into circuits, making it user-friendly for engineers.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capacity enables the device to manage significant power loads, crucial for automotive performance.

Package Style (Meter): SMALL OUTLINE

The small outline package allows for greater design flexibility and space-saving in automotive electronics.

Maximum Operating Temperature: 175 °C

High temperature tolerance ensures reliable operation even in extreme automotive environments.

Maximum Collector-Emitter Voltage: 380 V

Capable of handling high voltage levels, making it suitable for demanding automotive ignition applications.

Transistor Element Material: SILICON

Silicon semiconductors are known for their excellent electrical properties, making them a standard choice for robust transistors.

Maximum Collector Current (IC): 20 A

The high collector current rating supports increased load capacity, essential for automotive ignition systems.

Maximum Gate-Emitter Threshold Voltage: 2.2 V

A low threshold voltage allows for efficient drive circuit design, reducing power loss during operation.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish enhances solderability and corrosion resistance, improving longevity in automotive applications.

Terminal Position: SINGLE

Single terminal positioning simplifies installation and reduces the likelihood of connection mistakes.

Case Connection: COLLECTOR

Direct collector connection streamlines circuit design and improves thermal management.

Maximum Time At Peak Reflow Temperature: 30 s

This allows for reliable soldering during assembly processes while preventing thermal damage to the component.

Peak Reflow Temperature: 245 °C

The peak reflow temperature accommodates modern soldering techniques, ensuring compatibility with standard manufacturing processes.

Nominal Turn On Time (ton): 1570 ns

Fast turn-on time enhances device responsiveness, critical for dynamic automotive ignition applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB10NB40LZT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

380 V

Maximum Gate-Emitter Threshold Voltage:

2.2 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

12000 ns

Nominal Turn On Time (ton):

1570 ns

Trade Compliance

STGB10NB40LZT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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