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STGB10N60LT4

STMicroelectronics

STGB10N60LT4 by STMicroelectronics

STGB10N60LT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 25A IC, and 2600ns ton. It is used in automotive ignition systems due to its COLLECTOR connection and SMALL OUTLINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,026 parts In-Stock

1+ parts

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100+ parts

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3,026

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Digiode

USA . 1,523 parts In-Stock

1+ parts

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1k+ parts

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1,523

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Anansix

USA . 735 parts In-Stock

1+ parts

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735

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 280 parts In-Stock

1+ parts

$1.609

100+ parts

-

1k+ parts

$1.448

10k+ parts

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280

$1.609

-

$1.448

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MKK Technologies

India . 1,179 parts In-Stock

1+ parts

$3.026

100+ parts

-

1k+ parts

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10k+ parts

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1,179

$3.026

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DigiPath Technology Company

USA . 1,179 parts In-Stock

1+ parts

$3.026

100+ parts

-

1k+ parts

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10k+ parts

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1,179

$3.026

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Corphita

USA . 1,308 parts In-Stock

1+ parts

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1,308

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Parana Technologies

USA . 818 parts In-Stock

1+ parts

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100+ parts

$1.924

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818

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$1.924

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Overview

Elevate your automotive ignition systems with the STGB10N60LT4 from STMicroelectronics! As a leading manufacturer in the industry, STMicroelectronics delivers top-notch quality and reliability. This Insulated Gate Bipolar Transistor is a game-changer, offering exceptional performance and durability for your automotive ignition applications. With its N-CHANNEL polarity, SINGLE configuration, and high maximum collector-emitter voltage of 600V, this transistor ensures optimal efficiency and safety. Trust STMicroelectronics to provide cutting-edge technology that exceeds expectations and enhances your products. Upgrade to the STGB10N60LT4 today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product suitable for automotive applications where reliability is crucial.

Polarity or Channel Type: N-CHANNEL

Offers efficient current flow and control, enhancing the performance of the product in automotive ignition systems.

Configuration: SINGLE

Simplifies the design and installation process, making the product easy to integrate into automotive ignition systems.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring optimal performance and reliability in this application.

Surface Mount: YES

Enables easy and compact mounting on circuit boards, saving space and simplifying the assembly process in automotive applications.

Package Shape: RECTANGULAR

Facilitates efficient placement and orientation on circuit boards, optimizing the overall layout of automotive ignition systems.

Terminal Form: GULL WING

Provides secure and reliable electrical connections, reducing the risk of signal loss or disconnection in automotive environments.

No. of Terminals: 2

Simplified terminal configuration makes installation and connection straightforward, ensuring ease of use in automotive ignition systems.

Package Style (Meter): SMALL OUTLINE

Compact package design saves space and allows for efficient integration into automotive ignition systems.

Maximum Operating Temperature: 175 °C

High operating temperature range ensures the product can withstand the demanding conditions in automotive environments without performance degradation.

Maximum Collector-Emitter Voltage: 600 V

High voltage rating allows the product to handle the voltage requirements of automotive ignition systems, ensuring reliable operation.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making the product suitable for automotive applications where consistency is essential.

Maximum Collector Current (IC): 25 A

High collector current rating allows the product to handle the current demands of automotive ignition systems, ensuring efficient operation.

Terminal Position: SINGLE

Simplified terminal configuration makes installation and connection straightforward, ensuring ease of use in automotive ignition systems.

Case Connection: COLLECTOR

Clear connection designation simplifies installation and troubleshooting, ensuring efficient integration into automotive ignition systems.

Nominal Turn On Time (ton): 2600 ns

Fast turn-on time enhances the product's efficiency and responsiveness in automotive ignition systems, improving overall performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB10N60LT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn On Time (ton):

2600 ns

Trade Compliance

STGB10N60LT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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