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TSG60N100CEC0

Taiwan Semiconductor

TSG60N100CEC0 by Taiwan Semiconductor

TSG60N100CEC0 by Taiwan Semiconductor is an N-CHANNEL IGBT with 1000V max collector-emitter voltage and 60A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 1510ns.

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Nova Conductors

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AZTECH Wire

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Unleash the power of Taiwan Semiconductor's TSG60N100CEC0 Insulated Gate Bipolar Transistor (IGBT) for your motor control applications. With a maximum collector-emitter voltage of 1000V and a collector current of 60A, this N-channel transistor offers exceptional performance and reliability. Its single configuration with built-in diode ensures seamless operation, while the fast turn-on and turn-off times guarantee efficiency. Trust Taiwan Semiconductor's expertise in semiconductor manufacturing to deliver a top-quality product that will elevate your motor control systems to new heights.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - The use of plastic/epoxy makes this product lightweight and durable, perfect for various applications.

Polarity or Channel Type:

N-CHANNEL - N-channel IGBTs offer lower conduction loss, higher efficiency, and faster operation than P-channel types.

Configuration:

SINGLE WITH BUILT-IN DIODE - The built-in diode simplifies circuit design, reduces components, and improves overall system efficiency.

Transistor Application:

MOTOR CONTROL - Ideal for motor control applications due to its fast turn-on/off times and high current/voltage ratings.

Package Shape:

RECTANGULAR - The rectangular shape allows for easy mounting and integration into existing systems.

Terminal Form:

THROUGH-HOLE - Through-hole terminals provide a secure and reliable connection, suitable for industrial environments.

Nominal Turn Off Time (toff):

1510 ns - The fast turn-off time ensures quick switching and reduced power losses during operation.

No. of Terminals:

3 - The 3 terminals provide flexibility in circuit design and compatibility with a variety of systems.

Package Style (Meter):

FLANGE MOUNT - The flange mount design allows for easy installation and heat dissipation, extending the product's lifespan.

Maximum Collector-Emitter Voltage:

1000 V - With a high maximum voltage rating, this IGBT can withstand high voltage spikes and surges, ensuring reliability.

Transistor Element Material:

SILICON - Silicon IGBTs offer low on-state voltage drop, high thermal conductivity, and excellent ruggedness for robust performance.

Maximum Collector Current (IC):

60 A - The high maximum current rating makes this IGBT suitable for high-power applications, such as motor drives and inverters.

Terminal Position:

SINGLE - The single terminal position simplifies installation and wiring, reducing the risk of errors in assembly.

Nominal Turn On Time (ton):

470 ns - The fast turn-on time ensures quick response and precise control, making it ideal for applications requiring high speed and efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) TSG60N100CEC0 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Taiwan Semiconductor

Specs

Additional Features:

LOW CONDUCTION LOSS

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1000 V

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1510 ns

Nominal Turn On Time (ton):

470 ns

Trade Compliance

TSG60N100CEC0 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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