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IGW60N60H3

Infineon Technologies

IGW60N60H3 by Infineon Technologies

IGW60N60H3 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 80A. It has a nominal turn-off time of 314ns and a turn-on time of 64ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode configuration.

Median Price

$6.260

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 292 parts In-Stock

1+ parts

$6.260

100+ parts

$2.970

1k+ parts

$2.830

10k+ parts

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292

$6.260

$2.970

$2.830

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 816 parts In-Stock

1+ parts

$6.023

100+ parts

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816

$6.023

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Vyrian

USA . 357 parts In-Stock

1+ parts

$6.340

100+ parts

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357

$6.340

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Modulus Dynamics

Lithuania . 9,230 parts In-Stock

1+ parts

$1.787

100+ parts

$1.716

1k+ parts

$1.644

10k+ parts

-

9,230

$1.787

$1.716

$1.644

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Corphita

USA . 419 parts In-Stock

1+ parts

$5.706

100+ parts

-

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419

$5.706

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Overview

Elevate your power control with the Infineon Technologies IGW60N60H3 Insulated Gate Bipolar Transistor. Manufactured by a trusted industry leader, this N-CHANNEL transistor offers reliability and superior performance. Perfect for a range of applications, from industrial machinery to renewable energy systems, this single configuration transistor with built-in diode provides unparalleled value and efficiency. Take your projects to the next level with the IGW60N60H3 and experience the difference in quality and innovation that only Infineon Technologies can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the IGBT, ensuring reliability and durability.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower on-state voltage drop and higher switching speeds, making them ideal for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and provides protection against reverse current flow, enhancing overall efficiency and performance.

Transistor Application: POWER CONTROL

This IGBT is specifically designed for power control applications, ensuring optimal performance and reliability in such scenarios.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and installation, making it suitable for various industrial and commercial applications.

Maximum Collector-Emitter Voltage: 600 V

With a high maximum voltage rating, this IGBT can handle high voltage levels, making it suitable for power control applications that require such capabilities.

Maximum Collector Current (IC): 80 A

The high collector current rating allows this IGBT to handle large amounts of current, making it suitable for high-power applications.

Nominal Turn Off Time (toff): 314 ns

The fast turn-off time helps minimize switching losses and improve efficiency in power control applications.

Nominal Turn On Time (ton): 64 ns

The fast turn-on time ensures quick and efficient switching, making this IGBT suitable for applications that require rapid response times.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW60N60H3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

314 ns

Nominal Turn On Time (ton):

64 ns

Trade Compliance

IGW60N60H3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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