Loading...

FGD4536TM-F065

Onsemi

FGD4536TM-F065 by Onsemi

Onsemi's FGD4536TM-F065 is an N-CHANNEL IGBT with VCEsat of 1.8V and max power dissipation of 125W. Ideal for general purpose switching applications, it has a turn off time of 292ns and operates b/w -55 to 150°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,876 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,876

-

-

-

-

Vyrian

USA . 1,048 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,048

-

-

-

-

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

750

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,374 parts In-Stock

1+ parts

$4.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,374

$4.050

-

-

-

AZTECH Wire

Italy . 668 parts In-Stock

1+ parts

$19.192

100+ parts

-

1k+ parts

-

10k+ parts

-

668

$19.192

-

-

-

TANS Electronics

Latvia . 8,190 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,190

-

-

-

-

Problanco Electronics

Mexico . 7,152 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,152

-

-

-

-

Continental Prestige Electronics

USA . 6,512 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,512

-

-

-

-

SupplyDigital Components

Austria . 1,679 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,679

-

-

-

-

Kulean Microsystems

USA . 1,426 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,426

-

-

-

-

Corphita

USA . 1,294 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,294

-

-

-

-

Bastille Electronics

Australia . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Argo Parts USA

USA . 926 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

926

-

-

-

-

UHIMA Technologies

Türkiye . 570 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

570

-

-

-

-

Corohmni

South Africa . 118 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

118

-

-

-

-

Overview

Enhance your electronics projects with the high-quality FGD4536TM-F065 Insulated Gate Bipolar Transistor by Onsemi. With a focus on reliability and performance, Onsemi is a trusted manufacturer in the industry, ensuring that this N-CHANNEL transistor meets your needs for general purpose switching applications. Offering a compact and efficient design, this single transistor with built-in diode provides a maximum VCEsat of 1.8V and a maximum operating temperature of 150°C, making it ideal for a wide range of projects. Upgrade your electronics with the FGD4536TM-F065 and experience the value and benefits that Onsemi brings to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the IGBT, ensuring reliable performance.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and higher efficiency compared to P-channel IGBTs, making them suitable for many applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and can protect the IGBT from reverse voltage spikes.

Transistor Application: GENERAL PURPOSE SWITCHING

Suitable for a wide range of switching applications, making it versatile and adaptable for different uses.

Maximum VCEsat: 1.8 V

Low VCEsat helps to minimize power loss and improve efficiency in switching applications.

Surface Mount: YES

Surface mount packaging allows for easy and efficient assembly onto PCBs, saving space and reducing overall system size.

Maximum Power Dissipation (Abs): 125 W

With a high power dissipation capability, this IGBT can handle heavy loads and high power applications.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, suitable for demanding industrial environments.

Maximum Collector-Emitter Voltage: 360 V

High voltage capability allows for use in applications that require high voltage switching.

Nominal Turn On Time (ton): 26 ns

Fast turn-on time enhances the switching speed of the IGBT, improving overall performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGD4536TM-F065 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector-Emitter Voltage:

360 V

Maximum Gate-Emitter Threshold Voltage:

4 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

GENERAL PURPOSE SWITCHING

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

292 ns

Nominal Turn On Time (ton):

26 ns

Maximum VCEsat:

1.8 V

Trade Compliance

FGD4536TM-F065 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1