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IXYH82N120C3

IXYS Corporation

IXYH82N120C3 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 160 A; Case Connection: COLLECTOR;

Median Price

$20.135

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 50 parts In-Stock

1+ parts

$8.370

100+ parts

$8.370

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$8.370

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50

$8.370

$8.370

$8.370

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DigiKey

USA . 1,470 parts In-Stock

1+ parts

$19.760

100+ parts

$12.404

1k+ parts

$11.126

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1,470

$19.760

$12.404

$11.126

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Element14

Singapore . 312 parts In-Stock

1+ parts

$20.510

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$15.630

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312

$20.510

$15.630

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Mouser Electronics

USA . 320 parts In-Stock

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$21.020

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$12.720

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320

$21.020

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$12.720

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Distrelec

Netherlands . 27 parts In-Stock

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$24.303

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$21.746

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27

$24.303

$21.746

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TTI Europe

Germany . 60 parts In-Stock

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$14.443

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Nova Conductors

Japan . 700 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 59 parts In-Stock

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$16.560

100+ parts

$12.600

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59

$16.560

$12.600

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Component Stockers USA

USA . 2,739 parts In-Stock

1+ parts

$18.740

100+ parts

$14.280

1k+ parts

$12.740

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2,739

$18.740

$14.280

$12.740

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Microchip USA

USA . 3,261 parts In-Stock

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$55.216

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3,261

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Argo Parts USA

USA . 5,402 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Perfect Parts

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Aranea Global

USA . 50 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYH82N120C3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

295 ns

Nominal Turn On Time (ton):

119 ns

Trade Compliance

IXYH82N120C3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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