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IXYH75N65C3H1

Littelfuse

IXYH75N65C3H1 by Littelfuse

The Littelfuse IXYH75N65C3H1 is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a collector-emitter voltage of 650V. Ideal for power control applications, it has a max power dissipation of 750W and operates b/w -55 to 175°C temperatures.

Median Price

$17.530

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Mouser Electronics

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Overview

Unlock the power of efficient power control with the IXYH75N65C3H1 by Littelfuse. As a leading manufacturer in the industry, Littelfuse guarantees top-notch quality and reliability in their products. This Insulated Gate Bipolar Transistor (IGBT) is perfect for applications requiring high power dissipation, with a maximum VCEsat of 2.3V and a maximum collector current of 170A. The single configuration with built-in diode ensures ease of use, while the N-channel design offers versatile performance. Trust Littelfuse to deliver superior technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control and allows for high performance in applications requiring N-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor package.

Transistor Application: POWER CONTROL

Ideal for applications requiring precise power control and high efficiency.

Maximum VCEsat: 2.3 V

Low VCEsat reduces power dissipation and enhances overall efficiency of the transistor.

Package Shape: RECTANGULAR

Enables easy mounting and integration into various electronic devices and systems.

Nominal Turn Off Time (toff): 166 ns

Fast turn-off time allows for quick switching and improves overall performance of the transistor.

Maximum Power Dissipation (Abs): 750 W

High power dissipation capability makes it suitable for demanding applications that require high power handling.

Package Style (Meter): FLANGE MOUNT

Facilitates easy mounting and installation in a variety of systems.

Maximum Operating Temperature: 175 °C

Can operate efficiently in higher temperature environments, offering reliability in demanding conditions.

Maximum Collector-Emitter Voltage: 650 V

High Vce voltage rating allows for robust performance in applications with higher voltage requirements.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and reliability for long-term operation.

Maximum Gate-Emitter Voltage: 20 V

Allows for precise gate control and ensures stable operation within the specified voltage range.

Minimum Operating Temperature: -55 °C

Can operate in low temperature conditions, making it suitable for a wide range of environments.

Maximum Collector Current (IC): 170 A

High collector current rating enables handling of large currents, suitable for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 6 V

Provides a threshold voltage for gate control, ensuring reliable and stable performance.

Terminal Finish: MATTE TIN

Matte tin finish offers good solderability and ensures secure connections for reliable operation.

Terminal Position: SINGLE

Simplified terminal configuration for easy installation and connection in circuits.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation and thermal management.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand peak reflow temperatures for a specified duration, ensuring reliable soldering during assembly.

Peak Reflow Temperature °C: 260

Can withstand high peak reflow temperatures during soldering processes without damage.

Nominal Turn On Time (ton): 83 ns

Fast turn-on time enables quick response and high-speed switching for efficient power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYH75N65C3H1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

166 ns

Nominal Turn On Time (ton):

83 ns

Maximum VCEsat:

2.3 V

Trade Compliance

IXYH75N65C3H1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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