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IXYH82N120C3

Littelfuse

IXYH82N120C3 by Littelfuse

IXYH82N120C3 by Littelfuse is an N-CHANNEL IGBT with VCEsat of 3.2V, IC of 200A, and Ptot of 1250W. Ideal for POWER CONTROL applications, it operates b/w -55 to 175°C with a turn-off time of 295ns.

Median Price

$20.135

Lifecycle Status

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Newark

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$8.370

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$8.370

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DigiKey

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$19.760

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$12.404

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$11.126

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$19.760

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Element14

Singapore . 312 parts In-Stock

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$20.510

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$15.630

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Mouser Electronics

USA . 320 parts In-Stock

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$21.020

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$12.720

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Distrelec

Netherlands . 27 parts In-Stock

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$24.303

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$21.746

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TTI Europe

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Nova Conductors

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Continental Prestige Electronics

USA . 59 parts In-Stock

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$16.560

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$12.600

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Component Stockers USA

USA . 2,739 parts In-Stock

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$18.740

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$14.280

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$12.740

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$18.740

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Microchip USA

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$55.216

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Argo Parts USA

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Overview

Experience the superior performance and reliability of the IXYH82N120C3 by Littelfuse, a leading manufacturer in the industry. As an Insulated Gate Bipolar Transistor (IGBT), this high-quality product is designed for power control applications, offering a maximum collector-emitter voltage of 1200V and a maximum collector current of 200A. With a nominal turn-off time of 295ns and a maximum power dissipation of 1250W, this transistor ensures efficient and effective operation. Trust Littelfuse for cutting-edge technology and unmatched durability in your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the IGBT, ensuring reliability and longevity.

Maximum VCEsat: 3.2 V

Low VCEsat means lower power losses in the transistor, leading to increased efficiency.

Maximum Power Dissipation (Abs): 1250 W

Can handle high power dissipation, suitable for power control applications.

Maximum Collector-Emitter Voltage: 1200 V

Capable of handling high voltage levels, making it suitable for power control applications.

Nominal Turn Off Time (toff): 295 ns

Fast turn-off time allows for precise control in power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYH82N120C3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

295 ns

Nominal Turn On Time (ton):

119 ns

Maximum VCEsat:

3.2 V

Trade Compliance

IXYH82N120C3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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