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IXYH8N250CHV

Littelfuse

IXYH8N250CHV by Littelfuse

Littelfuse IXYH8N250CHV is an N-CHANNEL IGBT with 2500V VCE, 29A IC, and 280W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-on time of 24ns and low VCEsat of 4V. With a wide operating temperature range (-55 to 175 °C), it's suitable for various industrial uses.

Median Price

$22.230

Lifecycle Status

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3

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< 1k

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DigiKey

USA . 150 parts In-Stock

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$10.912

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Verical

USA . 58 parts In-Stock

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$25.000

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Nova Conductors

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Ampacity Inc.

Singapore . 320 parts In-Stock

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$16.820

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Microchip USA

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Perfect Parts

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Overview

Unlock the power of reliable and efficient performance with the Littelfuse IXYH8N250CHV Insulated Gate Bipolar Transistor (IGBT). Crafted by a trusted manufacturer, this N-CHANNEL transistor offers seamless power control for a variety of applications. With a maximum VCEsat of 4V and a maximum collector-emitter voltage of 2500V, this single configuration transistor delivers exceptional performance. Whether you're looking to optimize power dissipation or enhance your power management systems, the IXYH8N250CHV is the perfect solution. Experience superior quality and unmatched value with this top-of-the-line component from Littelfuse.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection for the internal components of the IGBT.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL polarity offers lower ON-state resistance and higher efficiency compared to P-CHANNEL, making it a suitable choice for power control applications.

Maximum VCEsat: 4 V

The low VCEsat value of 4 V indicates minimal saturation voltage, resulting in reduced power loss and improved efficiency in power control operations.

Maximum Power Dissipation (Abs): 280 W

With a maximum power dissipation of 280 W, this IGBT can handle high power loads efficiently and reliably.

Maximum Collector-Emitter Voltage: 2500 V

The high maximum collector-emitter voltage of 2500 V allows the IGBT to operate in high voltage applications with ease.

Maximum Gate-Emitter Threshold Voltage: 5 V

The low gate-emitter threshold voltage of 5 V ensures efficient switching of the IGBT with minimal gate drive power.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYH8N250CHV attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

2500 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

328 ns

Nominal Turn On Time (ton):

24 ns

Maximum VCEsat:

4 V

Trade Compliance

IXYH8N250CHV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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