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VS-GT100DA120UF

Vishay Intertechnology

VS-GT100DA120UF by Vishay Intertechnology

VS-GT100DA120UF by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 187A max collector current. Ideal for power control applications, it features a single configuration with built-in diode, 490ns turn off time, and 208ns turn on time. UL approved and designed in a rectangular package style for flange mount.

Median Price

$41.900

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 88 parts In-Stock

1+ parts

$33.880

100+ parts

$27.030

1k+ parts

-

10k+ parts

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88

$33.880

$27.030

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Mouser Electronics

USA . 222 parts In-Stock

1+ parts

$41.280

100+ parts

-

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222

$41.280

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DigiKey

USA . 48 parts In-Stock

1+ parts

$41.280

100+ parts

$28.137

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-

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48

$41.280

$28.137

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Newark

USA . 73 parts In-Stock

1+ parts

$42.520

100+ parts

$31.770

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-

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73

$42.520

$31.770

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Element14

Singapore . 107 parts In-Stock

1+ parts

$55.290

100+ parts

$49.010

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-

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107

$55.290

$49.010

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Verical

USA . 3 parts In-Stock

1+ parts

$85.485

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3

$85.485

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EBV Elektronik

Germany . 150 parts In-Stock

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150

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Distributors (In-Stock)

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$37.706

100+ parts

-

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-

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150

$37.706

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TME

Poland . 3 parts In-Stock

1+ parts

$65.010

100+ parts

$45.640

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3

$65.010

$45.640

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Vyrian

USA . 5,476 parts In-Stock

1+ parts

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5,476

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Lonics

Poland . 1,000 parts In-Stock

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1,000

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Rutronik

Germany . 280 parts In-Stock

1+ parts

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100+ parts

$36.950

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280

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$36.950

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NAC Semi

USA . 120 parts In-Stock

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$152.080

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120

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$152.080

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ComSIT Distribution GmbH

Germany . 8 parts In-Stock

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8

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 67 parts In-Stock

1+ parts

$1.650

100+ parts

-

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67

$1.650

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Corohmni

South Africa . 63 parts In-Stock

1+ parts

$1.945

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63

$1.945

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Semicontronic

India . 173 parts In-Stock

1+ parts

$27.670

100+ parts

$26.978

1k+ parts

$26.840

10k+ parts

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173

$27.670

$26.978

$26.840

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Ampacity Inc.

Singapore . 41 parts In-Stock

1+ parts

$27.670

100+ parts

-

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41

$27.670

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Continental Prestige Electronics

USA . 110 parts In-Stock

1+ parts

$39.460

100+ parts

$38.210

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110

$39.460

$38.210

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QUARKTWIN TECHNOLOGY LTD

USA . 12,452 parts In-Stock

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12,452

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Microchip USA

USA . 10,417 parts In-Stock

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10,417

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Argo Parts USA

USA . 590 parts In-Stock

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590

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Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$36.952

1k+ parts

$35.820

10k+ parts

$35.066

50

-

$36.952

$35.820

$35.066

GreenTree Electronics

Israel . 30 parts In-Stock

1+ parts

-

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30

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Overview

Discover the power of the VS-GT100DA120UF Insulated Gate Bipolar Transistor by Vishay Intertechnology for your power control applications. With a maximum collector-emitter voltage of 1200V and a nominal turn-off time of 490ns, this N-channel transistor offers exceptional performance and reliability. The single configuration with built-in diode makes installation easy, while the UL approved reference standard ensures quality. Trust Vishay Intertechnology for cutting-edge technology and superior products that deliver value and efficiency to meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and good electrical insulation, making the product suitable for various industrial applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically offer higher efficiency and faster switching speeds compared to P-channel IGBTs, making them ideal for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space, making the product more efficient and cost-effective.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring reliable and efficient performance in controlling high power levels.

Package Shape: RECTANGULAR

The rectangular shape allows for easier mounting and integration into various electronic systems, enhancing overall versatility.

Nominal Turn Off Time (toff): 490 ns

The fast turn-off time improves the efficiency of the IGBT in power control applications, reducing switching losses and improving overall performance.

No. of Terminals: 4

Having 4 terminals provides flexibility in circuit connections and ensures stable operation in demanding industrial environments.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure and stable mounting, reducing the risk of mechanical stress and ensuring reliable performance.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum voltage rating makes the IGBT suitable for high-power applications, providing reliability and safety in handling high voltages.

Transistor Element Material: SILICON

Silicon-based transistor elements offer high efficiency, fast switching speeds, and good thermal performance, making the IGBT reliable and durable.

Maximum Collector Current (IC): 187 A

The high maximum collector current rating allows the IGBT to handle large current loads, ensuring reliable operation in power control applications.

Terminal Position: UPPER

The upper terminal position facilitates easy connections and ensures proper alignment in circuit configurations, improving overall usability and reliability.

Case Connection: ISOLATED

The isolated case connection enhances safety by providing electrical insulation, reducing the risk of short circuits and improving overall system reliability.

Nominal Turn On Time (ton): 208 ns

The fast turn-on time improves the efficiency of the IGBT in power control applications, ensuring rapid switching and precise control over power delivery.

Reference Standard: UL APPROVED

Being UL approved signifies that the product meets rigorous safety and performance standards, ensuring reliability and compliance with industry regulations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) VS-GT100DA120UF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Vishay Intertechnology

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

UL APPROVED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

490 ns

Nominal Turn On Time (ton):

208 ns

Trade Compliance

VS-GT100DA120UF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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