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IXYP20N65C3D1M

IXYS Corporation

IXYP20N65C3D1M by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 18 A; Package Style (Meter): FLANGE MOUNT;

Median Price

$2.541

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

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$2.541

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50

$2.541

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Vyrian

USA . 216 parts In-Stock

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216

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Corohmni

South Africa . 325 parts In-Stock

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$1.067

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325

$1.067

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Aztec Data Supply Inc.

USA . 1,955 parts In-Stock

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$1.576

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Argo Parts USA

USA . 2,889 parts In-Stock

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Continental Prestige Electronics

USA . 2,585 parts In-Stock

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$2.490

2,585

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$2.490

Netroflash

USA . 500 parts In-Stock

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$2.541

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$2.414

10k+ parts

$2.363

500

$2.541

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$2.414

$2.363

Microchip USA

USA . 2,874 parts In-Stock

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$17.427

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2,874

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AZTECH Wire

Italy . 283 parts In-Stock

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$17.709

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Ampacity Inc.

Singapore . 1,082 parts In-Stock

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$41.050

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Semicontronic

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$58.050

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$56.599

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$56.308

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$56.308

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

USA . 224 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYP20N65C3D1M attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

132 ns

Nominal Turn On Time (ton):

51 ns

Maximum VCEsat:

2.5 V

Trade Compliance

IXYP20N65C3D1M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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