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IXYP60N65A5

IXYS Corporation

IXYP60N65A5 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 395 W; Maximum Collector Current (IC): 134 A; Transistor Element Material: SILICON;

Median Price

$5.970

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 243 parts In-Stock

1+ parts

$4.560

100+ parts

$2.200

1k+ parts

$1.990

10k+ parts

-

243

$4.560

$2.200

$1.990

-

Mouser Electronics

USA . 258 parts In-Stock

1+ parts

$5.850

100+ parts

$3.220

1k+ parts

$2.730

10k+ parts

-

258

$5.850

$3.220

$2.730

-

DigiKey

USA . 42 parts In-Stock

1+ parts

$6.090

100+ parts

$2.944

1k+ parts

$2.384

10k+ parts

-

42

$6.090

$2.944

$2.384

-

Element14

Singapore . 243 parts In-Stock

1+ parts

$8.220

100+ parts

$4.130

1k+ parts

$3.750

10k+ parts

-

243

$8.220

$4.130

$3.750

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Distributors (In-Stock)

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 20 parts In-Stock

1+ parts

$5.600

100+ parts

$4.190

1k+ parts

-

10k+ parts

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20

$5.600

$4.190

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Ampacity Inc.

Singapore . 68 parts In-Stock

1+ parts

$6.920

100+ parts

-

1k+ parts

-

10k+ parts

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68

$6.920

-

-

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Microchip USA

USA . 5,505 parts In-Stock

1+ parts

$19.628

100+ parts

-

1k+ parts

-

10k+ parts

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5,505

$19.628

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-

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QUARKTWIN TECHNOLOGY LTD

USA . 25,945 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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25,945

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-

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

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100+ parts

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15,000

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Argo Parts USA

USA . 2,365 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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2,365

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1,000

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYP60N65A5 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.8 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

340 ns

Nominal Turn On Time (ton):

60 ns

Maximum VCEsat:

1.35 V

Trade Compliance

IXYP60N65A5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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