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IKW75N65ES5

Infineon Technologies

IKW75N65ES5 by Infineon Technologies

IKW75N65ES5 by Infineon is an N-CHANNEL IGBT with VCEsat of 1.75V and IC of 80A. Ideal for POWER CONTROL applications, it has a max VCE of 650V and TOFF of 233ns, operating b/w -40 to 175°C.

Median Price

$7.090

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 48 parts In-Stock

1+ parts

$7.090

100+ parts

$3.820

1k+ parts

$3.380

10k+ parts

-

48

$7.090

$3.820

$3.380

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Maritex

Poland . 60,320 parts In-Stock

1+ parts

$4.923

100+ parts

$3.191

1k+ parts

$2.828

10k+ parts

$2.422

60,320

$4.923

$3.191

$2.828

$2.422

Digiode

USA . 104 parts In-Stock

1+ parts

$6.517

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-

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104

$6.517

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Rutronik

Germany . 2,415 parts In-Stock

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-

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$4.460

1k+ parts

$4.040

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2,415

-

$4.460

$4.040

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Vyrian

USA . 1,175 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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200

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Distributors (Availability)

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Corohmni

South Africa . 274 parts In-Stock

1+ parts

$0.744

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274

$0.744

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Modulus Dynamics

Lithuania . 5,922 parts In-Stock

1+ parts

$1.750

100+ parts

$1.680

1k+ parts

$1.610

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-

5,922

$1.750

$1.680

$1.610

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Ampacity Inc.

Singapore . 1,493 parts In-Stock

1+ parts

$5.830

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-

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1,493

$5.830

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Corphita

USA . 317 parts In-Stock

1+ parts

$6.174

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317

$6.174

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Metaverse IC Inc.

Canada . 100,000 parts In-Stock

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Infinite Electronics LLP (Excess)

. 20,715 parts In-Stock

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20,715

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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GreenTree Electronics

Israel . 8,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,352 parts In-Stock

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Continental Prestige Electronics

USA . 4,920 parts In-Stock

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Lixinc

USA . 4,895 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,568 parts In-Stock

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Futuretech Components

Singapore . 3,000 parts In-Stock

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Argo Parts USA

USA . 2,603 parts In-Stock

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Technoshack Inc. (Excess)

Canada . 850 parts In-Stock

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850

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Kepictronics

USA . 200 parts In-Stock

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Advanced Electronics

New Zealand . 57 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Infineon TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs are the link between the L5 and H5 and address applications switching between 10kHz and 40kHz. The IGBTs deliver high efficiency, faster time to market cycles, circuit design complexity reduction, and PCB bill of material cost optimization. Infineon S5 IGBTs are packed with features to help designers achieve goals without the need to increase circuit complexity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

Offers excellent performance and efficiency for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space, making it ideal for compact electronic devices.

Transistor Application: POWER CONTROL

Specifically designed for power control tasks, ensuring optimal performance in high-power applications.

Maximum VCEsat: 1.75 V

Low VCEsat helps reduce power loss and enhances overall efficiency of the transistor.

Package Shape: RECTANGULAR

Allows for easy installation and integration into various electronic systems.

Terminal Form: THROUGH-HOLE

Facilitates convenient soldering and mounting onto circuit boards.

Nominal Turn Off Time (toff): 233 ns

Fast turn-off time enables quick switching, improving overall efficiency of the device.

No. of Terminals: 3

Provides necessary connections for input, output, and control signals, ensuring proper functionality.

Maximum Power Dissipation (Abs): 395 W

High power dissipation rating allows the transistor to handle heavy loads without overheating.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and heat dissipation, essential for high-power applications.

Maximum Operating Temperature: 175 °C

Wide operating temperature range ensures reliable performance in various environments.

Maximum Collector-Emitter Voltage: 650 V

High voltage rating makes the transistor suitable for applications requiring high levels of power.

Transistor Element Material: SILICON

Silicon material provides good electrical properties and reliability for long-term use.

Maximum Gate-Emitter Voltage: 20 V

Withstands high gate-emitter voltages, enhancing the robustness of the transistor.

Minimum Operating Temperature: -40 °C

Operates efficiently even in extremely low temperatures, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 80 A

High collector current rating allows the transistor to handle heavy loads without performance degradation.

Maximum Gate-Emitter Threshold Voltage: 4.8 V

Low threshold voltage ensures efficient switching and control of the transistor.

Terminal Finish: TIN

Tin finish provides corrosion resistance and ensures reliable connections for optimal performance.

Terminal Position: SINGLE

Simplifies installation and wiring, reducing complexity in circuit design.

Case Connection: COLLECTOR

Provides a reliable connection point for the collector, ensuring proper functionality in power control applications.

Nominal Turn On Time (ton): 94 ns

Fast turn-on time enables quick response and high-speed switching, essential for power control tasks.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKW75N65ES5 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

4.8 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

233 ns

Nominal Turn On Time (ton):

94 ns

Maximum VCEsat:

1.75 V

Trade Compliance

IKW75N65ES5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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