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RGW80TS65HRC11

ROHM

RGW80TS65HRC11 by ROHM

ROHM RGW80TS65HRC11 is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 1.9V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 214W and operates b/w -40 to 175°C.

Median Price

$5.350

Lifecycle Status

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9

In-Stock Inventory

1k+

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Chip1Stop

Japan . 60 parts In-Stock

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$3.710

100+ parts

$1.840

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60

$3.710

$1.840

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DigiKey

USA . 440 parts In-Stock

1+ parts

$3.870

100+ parts

-

1k+ parts

$1.368

10k+ parts

$1.295

440

$3.870

-

$1.368

$1.295

Newark

USA . 18 parts In-Stock

1+ parts

$3.870

100+ parts

$2.670

1k+ parts

$2.490

10k+ parts

-

18

$3.870

$2.670

$2.490

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Mouser Electronics

USA . 450 parts In-Stock

1+ parts

$6.660

100+ parts

$5.500

1k+ parts

$3.240

10k+ parts

-

450

$6.660

$5.500

$3.240

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Farnell

UK . 20 parts In-Stock

1+ parts

$7.425

100+ parts

$3.491

1k+ parts

$3.225

10k+ parts

-

20

$7.425

$3.491

$3.225

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Element14

Singapore . 20 parts In-Stock

1+ parts

$7.829

100+ parts

$5.323

1k+ parts

$4.047

10k+ parts

$3.811

20

$7.829

$5.323

$4.047

$3.811

Verical

USA . 90 parts In-Stock

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-

100+ parts

$5.350

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90

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$5.350

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Semtec, LLC

USA . 30 parts In-Stock

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30

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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30

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

CoreStaff

Japan . 30 parts In-Stock

1+ parts

$5.761

100+ parts

$2.190

1k+ parts

-

10k+ parts

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30

$5.761

$2.190

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Microchip USA

USA . 6,148 parts In-Stock

1+ parts

$19.572

100+ parts

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6,148

$19.572

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Overview

Elevate your power control applications with the RGW80TS65HRC11 by ROHM. Crafted with precision and quality, this N-CHANNEL IGBT transistor offers a seamless single configuration for efficient performance. With a maximum VCEsat of 1.9V and maximum operating temperature of 175°C, this transistor guarantees reliable power control while maximizing power dissipation at 214W. Whether you're in the automotive industry or industrial automation, trust ROHM to deliver top-notch solutions for your needs. Experience unparalleled value, benefits, and advantages with the RGW80TS65HRC11 – your ultimate choice for power control excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, making the IGBT durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and faster switching speeds compared to P-channel IGBTs, making them more efficient in power control applications.

Maximum VCEsat: 1.9 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, resulting in lower power dissipation and higher efficiency.

Nominal Turn Off Time (toff): 254 ns

Faster turn-off time enables quicker switching transitions, reducing the chances of heat build-up and improving overall performance.

Maximum Power Dissipation (Abs): 214 W

High power dissipation capability allows the IGBT to handle large currents and voltages in power control applications without overheating.

Maximum Collector-Emitter Voltage: 650 V

High maximum voltage rating makes the IGBT suitable for applications requiring high voltage handling capabilities.

Maximum Gate-Emitter Voltage: 30 V

Ensures safe and reliable operation of the IGBT by limiting the voltage applied to the gate terminal, preventing damage from overvoltage conditions.

Nominal Turn On Time (ton): 51 ns

Fast turn-on time allows the IGBT to switch on quickly, reducing switching losses and improving efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGW80TS65HRC11 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

254 ns

Nominal Turn On Time (ton):

51 ns

Maximum VCEsat:

1.9 V

Trade Compliance

RGW80TS65HRC11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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