Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3350 W; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
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Insulated Gate Bipolar Transistors (IGBT) FF600R12IP4V attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Case Connection:
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Maximum Power Dissipation (Abs):
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FF600R12IP4V Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
BAV99
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Bkc Semiconductors
1N4148
Digitron Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;
BAV99-7-F
Diodes Incorporated
Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.
DS18B20
Maxim Integrated
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
LM107H/883
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
Cheng-yi Electronic
SS14
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NC7WZ17P6X
Onsemi
The Onsemi NC7WZ17P6X is a logic gate with 2 functions, featuring a propagation delay of 13.1 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85°C and has a max power supply current of 100mA. With Schmitt Trigger technology and small outline packaging, it suits compact electronic designs requiring fast signal processing.
LL4148
Semtech Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
M39029/58360
Esterline Technologies
CONNECTOR ACCESSORY; Terminal Type: CRIMP; Removal Tools: M81969/14-01; Associated Military - Specifications: MIL-DTL-38999; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT;
DS18B20+
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;
Semitron
RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;
M39029/58-360
Fct Electronic
CONNECTOR ACCESSORY; IEC Conformity: NO; Alternate Contact Sources: MILITARY; MIL Conformity: YES; Contact Gender: MALE; MIL-Connector Accessory Name: CONTACT;
43025-0400
Molex
The Molex 43025-0400 is a board connector with 4 contacts, 2 rows, and a mating contact pitch of 0.118". It has a body length of 0.27", insulation resistance of 1Gohm, and operates b/w -40 to 105°C. Ideal for commercial applications requiring a female connector with crimp termination and UL94V-0 flammability rating.
SMBJ18CA
Daco Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Weitron Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CM
Intersil
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
FDV303N
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;
IXXN110N65C4H1
Littelfuse
IXXN110N65C4H1 by Littelfuse is an N-CHANNEL IGBT with 650V VCEsat, 210A IC, and 750W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C.
IRG4BC30FD1PBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Maximum Operating Temperature: 150 Cel;
FF400R12KE3HOSA1
Infineon Technologies
FF400R12KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 760 ns turn off time, and a max voltage of 1200 V. It is commonly used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its high current rating of 580 A and fast turn on/off times.
IRGR2B60KDTRLPBF
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel;
APT75GP120JDQ3
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 128 A; Maximum Collector-Emitter Voltage: 1200 V;
IXXX300N60B3
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 550 A; Maximum Collector-Emitter Voltage: 600 V;
SK15DGDL126ET
Semikron International
SK15DGDL126ET by Semikron International is an N-CHANNEL IGBT with 1200V VCEsat, 22A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its complex configuration and SILICON material. Package style is FLANGE MOUNT with 23 terminals and operates up to 150°C.
FS150R12KE3BOSA1
FS150R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 200A, and turn-off time of 610ns. Ideal for applications requiring high power efficiency in industrial settings due to its isolated case connection and fast switching capabilities.
IRG4PC50KDPBF
IRG4PC50KDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.2V and a collector-emitter voltage of 600V. It is designed for power control applications, featuring a single configuration with built-in diode and a max power dissipation of 200W. This IGBT has a rectangular package shape, through-hole terminal form, and can operate in temperatures ranging from -55 to 150 °C.
IRG4BC30FD-SPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY;
STGP20V60DF
STMicroelectronics
N-CHANNEL; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED;
FF300R12ME4B11BPSA1
FF300R12ME4B11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max Collector-Emitter Voltage of 1200V and can handle a Collector Current of 450A, making it ideal for POWER CONTROL applications. The transistor features a Nominal Turn Off Time of 720ns and Nominal Turn On Time of 240ns, with UL APPROVAL for quality assurance.
FF450R12KT4F
Infineon's FF450R12KT4F is an N-Channel IGBT with VCEsat of 2.15V, IC of 580A, and Ptot of 2400W. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems due to its low turn-off time (720ns) and high collector-emitter voltage (1200V).
2MBI150NC-120
Fuji Electric
Fuji Electric's 2MBI150NC-120 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 3.3V, IC of 150A, and Pmax of 1100W. Ideal for POWER CONTROL applications due to its fast ton (650ns) and toff (850ns) times.
FGH30S130P
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 60 A; Case Connection: COLLECTOR;
IXGR32N170H1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 38 A; Package Shape: RECTANGULAR;
CM200DY-12NF
Mitsubishi Electric
CM200DY-12NF by Mitsubishi Electric is an N-CHANNEL IGBT with 2 elements and a built-in diode. It has a max VCEsat of 2.2V and can handle a max collector current (IC) of 200A. This IGBT is commonly used for power control applications.
FGA25N120ANTDTU
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 312 W; Maximum Collector Current (IC): 50 A; Package Style (Meter): FLANGE MOUNT;
STGD10NC60HT4
STGD10NC60HT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 20A IC, and 60W Ptot. Ideal for POWER CONTROL applications, it has a toff of 247ns and ton of 19ns. The GULL WING package style makes it suitable for surface mount designs in various electronic systems.
IGP15N60TXKSA1
Infineon's IGP15N60TXKSA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 30A max collector current. It has a turn-off time of 291ns and turn-on time of 32ns, making it ideal for power control applications. The transistor comes in a plastic/epoxy package with through-hole terminals and can operate at temperatures up to 175°C.
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FF600R12ME4B72BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 995 A; No. of Elements: 2; Peak Reflow Temperature (C): NOT SPECIFIED;
FF600R12ME4EB11BOSA1
N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
FF600R12ME4BOSA1
Infineon's FF600R12ME4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a VCEsat of 2.1V, IC of 995A, and Pmax of 4050W. Ideal for POWER CONTROL applications due to its fast ton of 310ns and toff of 770ns at max VCE of 1200V.
FF600R12ME4B11BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 995 A; No. of Elements: 2; Package Body Material: UNSPECIFIED;
FF600R12ME4PB11BOSA1
Infineon's FF600R12ME4PB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, featuring VCEsat of 2.1V and toff of 770ns. Ideal for POWER CONTROL applications, it operates up to 1200V at temperatures from -40°C to 150°C.
FF600R12ME4B11BPSA2
Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FF600R12ME4AB11BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3350 W; Maximum Collector Current (IC): 950 A; Reference Standard: UL RECOGNIZED;
FF600R17ME4BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 950 A; Transistor Application: POWER CONTROL; Terminal Form: UNSPECIFIED;
FF600R12KE4EBOSA1
FF600R12KE4EBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, built-in diode, and a max voltage of 1200V. It has a turn-off time of 630ns and turn-on time of 232ns, making it ideal for power control applications. This UL approved transistor operates from -40°C with a common emitter configuration in a rectangular package style.
FF600R12IP4BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1200 V; JESD-30 Code: R-XUFM-X7; Maximum Operating Temperature: 175 Cel;
FF600R12ME4AB11BPSA1
Insulated Gate Bipolar Transistors;
FF600R12IE4BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3350 W; Maximum Collector Current (IC): 600 A; Terminal Position: UPPER;
FF600R06ME3BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 700 A; Terminal Form: UNSPECIFIED; Maximum Collector-Emitter Voltage: 600 V;
FF600R12KE4BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-XUFM-X7; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 232 ns;
FF600R07ME4B11BPSA1
Insulated Gate Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
FF600R17ME4PB11BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 950 A; Package Style (Meter): FLANGE MOUNT; Terminal Form: UNSPECIFIED;
FF600R07ME4P_B11
N-Channel; Maximum Power Dissipation (Abs): 1800 W; Maximum Collector Current (IC): 700 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 650 V; Nominal Turn Off Time (toff): 570 ns;
FF600R12IP4VBOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3350 W; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Peak Reflow Temperature (C): NOT SPECIFIED;
FF600R12IS4F
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3700 W; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1200 V;
FF600R12KF4
Eupec & Kg
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Package Body Material: UNSPECIFIED; Package Shape: RECTANGULAR;
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