Loading...

STGD10NC60HT4

STMicroelectronics

STGD10NC60HT4 by STMicroelectronics

STGD10NC60HT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 20A IC, and 60W Ptot. Ideal for POWER CONTROL applications, it has a toff of 247ns and ton of 19ns. The GULL WING package style makes it suitable for surface mount designs in various electronic systems.

Median Price

$1.102

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 96 parts In-Stock

1+ parts

$0.742

100+ parts

-

1k+ parts

-

10k+ parts

-

96

$0.742

-

-

-

Digiode

USA . 3,412 parts In-Stock

1+ parts

$1.463

100+ parts

-

1k+ parts

-

10k+ parts

-

3,412

$1.463

-

-

-

Chip Stock

USA . 14,698 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

14,698

-

-

-

-

Anansix

USA . 2,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,300

-

-

-

-

Vyrian

USA . 1,044 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,044

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,139 parts In-Stock

1+ parts

$0.493

100+ parts

-

1k+ parts

-

10k+ parts

-

1,139

$0.493

-

-

-

Argo Parts USA

USA . 3,965 parts In-Stock

1+ parts

$0.742

100+ parts

-

1k+ parts

-

10k+ parts

-

3,965

$0.742

-

-

-

Continental Prestige Electronics

USA . 2,325 parts In-Stock

1+ parts

$0.742

100+ parts

-

1k+ parts

-

10k+ parts

$0.727

2,325

$0.742

-

-

$0.727

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.742

100+ parts

-

1k+ parts

$0.705

10k+ parts

$0.690

2,000

$0.742

-

$0.705

$0.690

Aztec Data Supply Inc.

USA . 300 parts In-Stock

1+ parts

$0.850

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$0.850

-

-

-

Corphita

USA . 198 parts In-Stock

1+ parts

$1.386

100+ parts

-

1k+ parts

-

10k+ parts

-

198

$1.386

-

-

-

Corohmni

South Africa . 80 parts In-Stock

1+ parts

$1.529

100+ parts

-

1k+ parts

-

10k+ parts

-

80

$1.529

-

-

-

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.584

100+ parts

$1.441

1k+ parts

$1.299

10k+ parts

-

100

$1.584

$1.441

$1.299

-

IDEA Electronic Components Group

UK . 1,398 parts In-Stock

1+ parts

$1.591

100+ parts

-

1k+ parts

$1.432

10k+ parts

-

1,398

$1.591

-

$1.432

-

MKK Technologies

India . 1,765 parts In-Stock

1+ parts

$2.991

100+ parts

-

1k+ parts

-

10k+ parts

-

1,765

$2.991

-

-

-

DigiPath Technology Company

USA . 1,765 parts In-Stock

1+ parts

$2.991

100+ parts

-

1k+ parts

-

10k+ parts

-

1,765

$2.991

-

-

-

Perfect Parts

USA . 10,226 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,226

-

-

-

-

Lixinc

USA . 6,627 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,627

-

-

-

-

RC Electronics

USA . 5,118 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,118

-

-

-

-

Kepictronics

USA . 4,828 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,828

-

-

-

-

A-Z Elektronik GmbH

Germany . 4,757 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,757

-

-

-

-

Microchip USA

USA . 4,298 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,298

-

-

-

-

Assy Fe

Spain . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Parana Technologies

USA . 2,149 parts In-Stock

1+ parts

-

100+ parts

$1.902

1k+ parts

-

10k+ parts

-

2,149

-

$1.902

-

-

Overview

Unlock the power of precise control with the STGD10NC60HT4 by STMicroelectronics. As a leader in the industry, STMicroelectronics delivers top-quality Insulated Gate Bipolar Transistors designed for power control applications. With a maximum collector-emitter voltage of 600V and a nominal turn-off time of 247ns, this N-channel transistor offers unmatched performance and reliability. Whether you're looking to optimize power consumption or enhance system efficiency, the STGD10NC60HT4 is the perfect choice. Experience the difference with STMicroelectronics and revolutionize your power control solutions today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, improving the overall durability and reliability of the product.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control capabilities and allows for high switching speeds, making it suitable for various applications.

Configuration: SINGLE

Simplifies the circuit design and integration process, making it easier to use in different power control systems.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and efficiency in controlling power circuits.

Maximum Power Dissipation (Abs): 60 W

Can handle high power levels without overheating, providing a reliable and stable operation in power control systems.

Maximum Operating Temperature: 150 °C

Withstands high operating temperatures, making it suitable for demanding industrial and automotive applications.

Maximum Collector-Emitter Voltage: 600 V

Supports high voltage requirements, allowing for increased flexibility in power control applications.

Maximum Collector Current (IC): 20 A

Capable of handling high currents, making it suitable for powering various devices and systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGD10NC60HT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

247 ns

Nominal Turn On Time (ton):

19 ns

Trade Compliance

STGD10NC60HT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19