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STGD10NC60ST4

STMicroelectronics

STGD10NC60ST4 by STMicroelectronics

STGD10NC60ST4 from STMicroelectronics is a robust N-channel IGBT designed for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 60W, and fast switching times (toff: 560ns). This surface-mount device ensures efficient performance in compact designs.

Median Price

$0.985

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,406 parts In-Stock

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$0.985

2,406

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$0.985

Distributors (In-Stock)

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Digiode

USA . 3,141 parts In-Stock

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3,141

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Vyrian

USA . 3,008 parts In-Stock

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3,008

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Anansix

USA . 2,398 parts In-Stock

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2,398

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 50 parts In-Stock

1+ parts

$1.226

100+ parts

-

1k+ parts

$1.104

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-

50

$1.226

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$1.104

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MKK Technologies

India . 1,595 parts In-Stock

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$2.306

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1,595

$2.306

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DigiPath Technology Company

USA . 1,595 parts In-Stock

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$2.306

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1,595

$2.306

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Component Stockers USA

USA . 295 parts In-Stock

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$99.990

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295

$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 9,966 parts In-Stock

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Perfect Parts

USA . 5,401 parts In-Stock

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Corphita

USA . 1,274 parts In-Stock

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Parana Technologies

USA . 831 parts In-Stock

1+ parts

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$1.466

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831

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$1.466

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Overview

Unlock unparalleled efficiency and reliability with the STGD10NC60ST4, a top-tier IGBT from STMicroelectronics. Renowned for their commitment to quality, STMicroelectronics delivers a robust solution perfect for motor control applications, ensuring optimal performance even in demanding environments. With its compact design and impressive power handling, this device not only enhances your systems but also maximizes energy savings, making it an essential choice for innovators seeking excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures lightweight and durability, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

The N-channel configuration provides enhanced performance in switching applications, making the IGBT efficient for motor control.

Configuration: SINGLE WITH BUILT-IN DIODE

This configuration improves the versatility and efficiency in circuits requiring freewheeling diodes, simplifying the design.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control, this IGBT excels in applications like inverters and drives, ensuring high performance and reliability.

Surface Mount: YES

Surface mount technology allows for higher density circuit designs and automated assembly, saving space and reducing costs.

Package Shape: RECTANGULAR

The rectangular shape facilitates easier layout design on PCBs, maximizing space efficiency and heat dissipation.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and facilitate automated soldering processes, enhancing reliability.

Nominal Turn Off Time (toff): 560 ns

A rapid turn-off time boosts the switching frequency and overall efficiency in power applications, contributing to improved performance.

No. of Terminals: 2

With only two terminals, the IGBT simplifies connections and reduces complexity in circuit design.

Maximum Power Dissipation (Abs): 60 W

Able to dissipate up to 60 W, this IGBT can handle substantial power loads, ideal for high-performance applications.

Package Style (Meter): SMALL OUTLINE

The small outline package allows for compact designs and is perfect for applications with space constraints.

Maximum Operating Temperature: 150 °C

A high operating temperature rating ensures reliability in demanding environments, preventing thermal breakdown.

Maximum Collector-Emitter Voltage: 600 V

With a collector-emitter voltage of 600 V, this IGBT can effectively handle high voltage applications, improving system robustness.

Transistor Element Material: SILICON

Silicon offers excellent thermal stability and conductivity, making this IGBT efficient and reliable under various conditions.

Maximum Gate-Emitter Voltage: 20 V

A high gate-emitter voltage rating allows for flexibility in design while ensuring the safe operation of the IGBT.

Maximum Collector Current (IC): 18 A

With a maximum collector current of 18 A, this IGBT can support substantial load requirements in demanding applications.

Maximum Gate-Emitter Threshold Voltage: 5.75 V

A lower gate-emitter threshold voltage enhances the drive circuit compatibility, ensuring efficient operational performance.

Terminal Finish: MATTE TIN

Matte tin terminals provide excellent solderability and corrosion resistance, enhancing overall durability and reliability.

Terminal Position: SINGLE

Single terminal position simplifies integration into circuitry, allowing for streamlined PCB layout and design.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum exposure time of 30 seconds at peak reflow temperature ensures minimal thermal stress during assembly processes.

Peak Reflow Temperature: 260 C

The ability to withstand high reflow temperatures guarantees compatibility with modern soldering processes, ensuring consistent performance.

Nominal Turn On Time (ton): 22.5 ns

A quick turn-on time improves switching efficiency and response in high-speed applications, making this device highly effective.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGD10NC60ST4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

560 ns

Nominal Turn On Time (ton):

22.5 ns

Trade Compliance

STGD10NC60ST4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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