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STGD7NB60ST4

STMicroelectronics

STGD7NB60ST4 by STMicroelectronics

STGD7NB60ST4 by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, ideal for MOTOR CONTROL applications. It has a max power dissipation of 55W, operates at up to 150°C, and features a small outline package style for surface mount assembly.

Median Price

$2.860

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,442 parts In-Stock

1+ parts

$2.860

100+ parts

$1.277

1k+ parts

$1.051

10k+ parts

$0.859

4,442

$2.860

$1.277

$1.051

$0.859

Mouser Electronics

USA . 1,783 parts In-Stock

1+ parts

$2.860

100+ parts

$1.280

1k+ parts

$1.020

10k+ parts

$0.956

1,783

$2.860

$1.280

$1.020

$0.956

Avnet

USA . 2,500 parts In-Stock

1+ parts

-

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2,500

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Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$1.117

100+ parts

-

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-

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50

$1.117

-

-

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Digiode

USA . 469 parts In-Stock

1+ parts

$2.280

100+ parts

-

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469

$2.280

-

-

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TME

Poland . 2,078 parts In-Stock

1+ parts

$2.710

100+ parts

$1.320

1k+ parts

$1.250

10k+ parts

-

2,078

$2.710

$1.320

$1.250

-

J2 Sourcing AB

Sweden . 22,500 parts In-Stock

1+ parts

-

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22,500

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Vyrian

USA . 3,232 parts In-Stock

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3,232

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Anansix

USA . 907 parts In-Stock

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907

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Lantek

USA . 150 parts In-Stock

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150

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A2Z Electronics, Inc.

USA . 39 parts In-Stock

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39

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Bristol Electronics

USA . 39 parts In-Stock

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39

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,132 parts In-Stock

1+ parts

$0.857

100+ parts

-

1k+ parts

$0.771

10k+ parts

-

2,132

$0.857

-

$0.771

-

Argo Parts USA

USA . 3,065 parts In-Stock

1+ parts

$1.117

100+ parts

-

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3,065

$1.117

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$1.117

100+ parts

-

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2,000

$1.117

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Continental Prestige Electronics

USA . 1,531 parts In-Stock

1+ parts

$1.117

100+ parts

-

1k+ parts

-

10k+ parts

$1.094

1,531

$1.117

-

-

$1.094

MKK Technologies

India . 2,337 parts In-Stock

1+ parts

$1.611

100+ parts

-

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2,337

$1.611

-

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DigiPath Technology Company

USA . 2,337 parts In-Stock

1+ parts

$1.611

100+ parts

-

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2,337

$1.611

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Ampacity Inc.

Singapore . 3,524 parts In-Stock

1+ parts

$2.040

100+ parts

-

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3,524

$2.040

-

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Component Stockers USA

USA . 3,101 parts In-Stock

1+ parts

$2.120

100+ parts

$1.410

1k+ parts

$1.010

10k+ parts

-

3,101

$2.120

$1.410

$1.010

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Corphita

USA . 2,634 parts In-Stock

1+ parts

$2.160

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2,634

$2.160

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Microchip USA

USA . 496 parts In-Stock

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$7.064

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496

$7.064

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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Infinite Electronics LLP (Excess)

. 22,506 parts In-Stock

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22,506

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Lixinc

USA . 14,810 parts In-Stock

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14,810

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A-Z Elektronik GmbH

Germany . 6,729 parts In-Stock

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6,729

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Perfect Parts

USA . 3,412 parts In-Stock

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3,412

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RC Electronics

USA . 3,180 parts In-Stock

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3,180

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Parana Technologies

USA . 2,016 parts In-Stock

1+ parts

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$1.024

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2,016

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$1.024

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GreenTree Electronics

Israel . 150 parts In-Stock

1+ parts

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150

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Overview

Elevate your motor control applications with the STGD7NB60ST4 by STMicroelectronics. Crafted with precision and expertise, this Insulated Gate Bipolar Transistor (IGBT) offers unparalleled quality and reliability. With a maximum collector-emitter voltage of 600V and a maximum operating temperature of 150°C, this N-CHANNEL transistor is designed to deliver optimal performance. Whether you're looking to enhance your industrial machinery or upgrade your power electronics, this single configuration transistor is the perfect choice. Trust STMicroelectronics to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the product lightweight and durable, ideal for applications where weight is a concern.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs offer high efficiency and fast switching speeds, making them suitable for motor control applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces the overall complexity of the system.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance and efficiency.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and compact design in tight spaces.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and easy soldering during assembly.

No. of Terminals: 2

Two terminals simplify the connection process and reduce the chance of errors during installation.

Maximum Power Dissipation (Abs): 55 W

With a high power dissipation rating, this IGBT can handle heavy loads and ensure reliable operation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for efficient use of PCB real estate.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures the IGBT can withstand harsh environmental conditions.

Maximum Collector-Emitter Voltage: 600 V

High collector-emitter voltage rating provides a wide voltage range for various applications.

Transistor Element Material: SILICON

Silicon material offers high reliability, low leakage, and improved thermal performance for long-term usage.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating ensures stable and accurate control of the IGBT.

Maximum Collector Current (IC): 15 A

High collector current rating allows for handling of heavy loads and high power applications.

Maximum Gate-Emitter Threshold Voltage: 5 V

Low gate-emitter threshold voltage ensures efficient turn-on and turn-off of the IGBT.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides excellent solderability and corrosion resistance for long-lasting connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces the chance of errors during assembly.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation and improved thermal management.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient reflow soldering process without compromising the integrity of the IGBT.

Peak Reflow Temperature °C: 260

High peak reflow temperature rating ensures reliable solder joints and long-term stability.

Nominal Turn On Time (ton): 1160 ns

Fast turn-on time ensures quick response and efficient operation in motor control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGD7NB60ST4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn On Time (ton):

1160 ns

Trade Compliance

STGD7NB60ST4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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