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RGTH60TS65DGC11

ROHM

RGTH60TS65DGC11 by ROHM

ROHM RGTH60TS65DGC11 is an N-CHANNEL IGBT with 650V VCE, 58A IC, and 179ns toff. Ideal for POWER CONTROL applications due to SINGLE configuration with BUILT-IN DIODE. Package style is FLANGE MOUNT in PLASTIC/EPOXY material.

Median Price

$4.015

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DigiKey

USA . 376 parts In-Stock

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$4.710

100+ parts

$2.620

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$1.822

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$1.688

376

$4.710

$2.620

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$1.688

Chip1Stop

Japan . 40 parts In-Stock

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$3.320

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Vyrian

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Cyclops Electronics Ltd

UK . 840 parts In-Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 235 parts In-Stock

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Microchip USA

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Kepictronics

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Continental Prestige Electronics

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Argo Parts USA

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GreenTree Electronics

Israel . 840 parts In-Stock

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Overview

Unleash the power of innovation with the RGTH60TS65DGC11 by ROHM! As a leading manufacturer in the industry, ROHM delivers top-notch quality and reliability in their Insulated Gate Bipolar Transistors (IGBT). Ideal for power control applications, this N-CHANNEL transistor with a built-in diode offers unparalleled performance and efficiency. With a maximum collector-emitter voltage of 650V and a nominal turn off time of just 179ns, this product is a game-changer in the market. Experience the benefits of cutting-edge technology and elevate your projects to new heights with the RGTH60TS65DGC11!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection to the IGBT, making it suitable for various industrial applications.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower ON-state resistance and higher efficiency compared to P-CHANNEL IGBTs, making them a good choice for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies the circuit design and helps in energy recovery during switching off, improving overall efficiency.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT can efficiently handle high currents and voltages with minimal losses.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and placement on circuit boards, saving space and facilitating heat dissipation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and reliable connection, especially in high-vibration environments, ensuring the stability of the IGBT in operation.

Nominal Turn Off Time (toff): 179 ns

The fast turn-off time of 179 ns minimizes switching losses and improves efficiency in power control applications.

No. of Terminals: 3

Having 3 terminals allows for easy connection and integration into the circuit, providing flexibility in design and installation.

Package Style (Meter): FLANGE MOUNT

The flange mount package style enables secure and stable mounting on heatsinks or other surfaces, ensuring effective heat dissipation for optimal performance.

Maximum Collector-Emitter Voltage: 650 V

With a high maximum collector-emitter voltage of 650 V, this IGBT can handle high voltage applications with ease, offering reliable and robust performance.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its high electrical conductivity and thermal stability, making it ideal for power semiconductor devices like IGBTs.

Maximum Collector Current (IC): 58 A

The high maximum collector current rating of 58 A allows the IGBT to handle heavy loads and currents, making it suitable for power control applications requiring high current capacities.

Terminal Position: SINGLE

Having a single terminal position simplifies the connection and installation process, ensuring ease of use and reliability in the circuit design.

Nominal Turn On Time (ton): 67 ns

The fast turn-on time of 67 ns results in quick response and switching speeds, enhancing the efficiency and performance of the IGBT in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGTH60TS65DGC11 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

179 ns

Nominal Turn On Time (ton):

67 ns

Trade Compliance

RGTH60TS65DGC11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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