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RGW60TK65GVC11

ROHM

RGW60TK65GVC11 by ROHM

ROHM RGW60TK65GVC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 33A max collector current. Ideal for power control applications, featuring 209ns turn-off time, 50ns turn-on time, and a plastic/epoxy package body for through-hole mounting.

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$4.890

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Overview

Discover the RGW60TK65GVC11 by ROHM - a top-quality Insulated Gate Bipolar Transistor designed for power control applications. Manufactured by industry leader ROHM, this N-CHANNEL transistor offers reliable performance and durability. With a maximum collector-emitter voltage of 650V and a nominal turn off time of 209ns, this single configuration transistor is perfect for a wide range of power control needs. Trust in ROHM's expertise and choose the RGW60TK65GVC11 for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties, making the product suitable for high power control applications.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have better performance and higher efficiency, making them a preferred choice for power control applications.

Configuration: SINGLE

Single IGBT configuration simplifies the circuit design and reduces complexity, making it easier to integrate into power control systems.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and reliability in controlling high power loads.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient heat dissipation and easy mounting on PCBs or heat sinks.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer strong mechanical stability and easy soldering, ensuring reliable connections in power control circuits.

Nominal Turn Off Time (toff): 209 ns

Fast turn-off time enables quick switching speeds, reducing power loss and improving efficiency in power control applications.

No. of Terminals: 3

Having 3 terminals allows for easy connections and integration into electronic circuits, simplifying the overall design process.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides secure mechanical mounting and reliable operation in high-power environments.

Maximum Collector-Emitter Voltage: 650 V

High maximum voltage rating allows for control of high-power loads, making it suitable for a wide range of power control applications.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency and reliable performance, ensuring long-term stability in power control systems.

Minimum Operating Temperature: -40 °C

Operating at a minimum temperature of -40°C ensures reliability in extreme temperature conditions, making it suitable for a variety of industrial applications.

Maximum Collector Current (IC): 33 A

High maximum collector current rating allows for handling high power loads, making it suitable for demanding power control applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable connections in power control circuits.

Terminal Position: SINGLE

Single terminal position simplifies the installation and wiring process, making it easier to integrate into power control systems.

Case Connection: ISOLATED

Isolated case connection provides electrical insulation and protection, ensuring safe operation in high-voltage applications.

Nominal Turn On Time (ton): 50 ns

Fast turn-on time allows for quick response and accurate control of power switching, improving efficiency and performance in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGW60TK65GVC11 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

209 ns

Nominal Turn On Time (ton):

50 ns

Trade Compliance

RGW60TK65GVC11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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