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RGW60TS65CHRC11

ROHM

RGW60TS65CHRC11 by ROHM

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 178 W; Maximum Collector Current (IC): 64 A; Terminal Form: THROUGH-HOLE;

Median Price

$9.960

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 450 parts In-Stock

1+ parts

$7.590

100+ parts

$5.060

1k+ parts

$4.660

10k+ parts

$4.060

450

$7.590

$5.060

$4.660

$4.060

Newark

USA . 28 parts In-Stock

1+ parts

$8.630

100+ parts

$7.200

1k+ parts

$7.190

10k+ parts

-

28

$8.630

$7.200

$7.190

-

DigiKey

USA . 402 parts In-Stock

1+ parts

$9.960

100+ parts

-

1k+ parts

-

10k+ parts

-

402

$9.960

-

-

-

Farnell

UK . 28 parts In-Stock

1+ parts

$10.270

100+ parts

$7.430

1k+ parts

$7.300

10k+ parts

-

28

$10.270

$7.430

$7.300

-

Mouser Electronics

USA . 473 parts In-Stock

1+ parts

$12.200

100+ parts

$9.290

1k+ parts

$7.720

10k+ parts

-

473

$12.200

$9.290

$7.720

-

Element14

Singapore . 28 parts In-Stock

1+ parts

$17.450

100+ parts

$13.280

1k+ parts

$13.060

10k+ parts

-

28

$17.450

$13.280

$13.060

-

Verical

USA . 900 parts In-Stock

1+ parts

-

100+ parts

$6.856

1k+ parts

$6.462

10k+ parts

-

900

-

$6.856

$6.462

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semtec, LLC

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

CoreStaff

Japan . 900 parts In-Stock

1+ parts

$11.002

100+ parts

$5.182

1k+ parts

-

10k+ parts

-

900

$11.002

$5.182

-

-

Microchip USA

USA . 4,356 parts In-Stock

1+ parts

$35.868

100+ parts

-

1k+ parts

-

10k+ parts

-

4,356

$35.868

-

-

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGW60TS65CHRC11 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

161 ns

Nominal Turn On Time (ton):

45 ns

Maximum VCEsat:

1.9 V

Trade Compliance

RGW60TS65CHRC11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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